[3] Loubriel G M, Helgeson W D, Mclanghlin D L et al.. Triggering GaAs lock-on switches with laser diode arrays. IEEE Trans. Electron. Devices, 1991, ED-38(4):692~695
[4] Krokell D, Grischkowsky D, Ketchen M B. Subpicosecond electrical pulse generation using photoconductive switches with long carrier lifetime. Appl. Phys. Lett., 1989, 54(11):1064~1047
[5] Morse J D, Pocne M D. Characteristics and modeling of high voltage photoconductive switching devices. Proc. IEEE Seventeenth Power Modulator Symposium, 1986. 211~213
[9] Iverson A E, Smith D. Mathematical modeling of photoconductor transcient response. IEEE Trans. Electron Devices, 1987, ED-34(10):2098~2107
[10] Eiichi Sano, Tsugumichi Shibata. Fullwave analysis of picosecond photoconductive switches. IEEE J. Quant. Electron., 1990, 26(2):372~377
[11] El-Chazaly S M, Joshi R P. Electromagnetic and transport considerations in subpicosecond photoconductive switch modeling. IEEE Trans. Microwave Theory and Tech., 1990, 38(5):629~637
[12] Hudgins J L, Bailey D W, Dougal R A et al.. Streamer model for ionization growth in a photoconductive power switch. IEEE Trans. Power Electron., 1995, 10(5):615~620
[14] Zhao Hanmin, Jung H. Hur, Gunderson M A. Avalanche injection model for the lock-on in Ⅲ-Ⅴ power photoconductive switches. J. Appl. Phys., 1993, 13(5):1807~1812
[16] Huang Dihui, Lin H C. DC and transmission line model for a high electron mobility transistor. IEEE Trans. Microwave Theory Tech., 1989, 37(9):1361~1369