Author Affiliations
1School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun, Jilin 130022, China2Optorun (Shanghai) Co., Ltd., Shanghai 200444, Chinashow less
Fig. 1. Optical constants of Si-H materials under different H2 gas flows. (a) Refractive index; (b) extinction coefficient
Fig. 2. Optical constants of Si-H materials. (a) Refractive index; (b) extinction coefficient
Fig. 3. Optical constants of Si3N4 materials. (a) Refractive index; (b) extinction coefficient
Fig. 4. Optical constants of SiO2 materials. (a) Refractive index; (b) extinction coefficient
Fig. 5. Front surface theoretical spectral curve
Fig. 6. Back surface theoretical spectral curve
Fig. 7. Double-sided transmission theoretical spectral curve
Fig. 8. Front surface spectral test curve
Fig. 9. Back surface spectral test curve
Fig. 10. Spectral test curve of sample 1 after boiling for 0.5 h
Fig. 11. Spectral test curve of sample 1 after adjusting the process and boiling for 0.5 h
Fig. 12. Comparison of design curve and actual test curve
Item | AOI |
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0° | 38° |
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Shift /nm | - | <20 | Low-stopband (min) /nm | 400 | 400 | Low-stopband (max) /nm | 890-920 | 870-900 | SW-transmission (average) /% | <0.1 | <0.1 | SW-transmission (max) /% | <1.0 | <1.0 | Centre wavelength /nm | 950 | 930 | Passband /nm | 925-975 | 905-955 | Passband-transmission (average) /% | ≥92 | ≥92 | Full width at half maximum /nm | 52-58 | 52-58 | High-stopband (min) /nm | 980-1010 | 960-990 | High-stopband (max) /nm | 1100 | 1100 | LW-transmission (average) /% | <0.3 | <0.3 | LW-transmission (max) /% | <0.5 | <0.5 |
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Table 1. Designed spectral parameters of filter
Gas flow /(mL·min-1) | n | k |
---|
90 | 3.469 | 1.79×10-4 | 100 | 3.429 | 1.37×10-4 | 110 | 3.400 | 3.93×10-5 | 120 | 3.308 | 3.40×10-5 | 130 | 3.249 | 2.28×10-5 |
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Table 2. Optical constants of Si-H at 950 nm under different H2 gas flows
Materials | n | k |
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Si-H | 3.400 | 3.93×10-5 | Si3N4 | 2.015 | 1.85×10-6 | SiO2 | 1.442 | 0 |
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Table 3. Optical constants of materials used in design
Materials | TG1/2-Si | ICP*2 |
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Power /kW | Ar flow /(mL·min-1) | | Power /kW | Ar flow /(mL·min-1) | O2 flow /(mL·min-1) | H2 flow /(mL·min-1) | N2 flow /(mL·min-1) |
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Si-H | 13 | 280 | 3 | 600 | 0 | 110 | 0 | Si3N4 | 12 | 280 | 2 | 600 | 0 | 0 | 560 | SiO2 | 15 | 280 | 4 | 120 | 240 | 0 | 0 |
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Table 4. Process parameters