Researching | High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system

Journals >Photonics Research >Volume 12 >Issue 4 >Page 767 > Article

Photonics Research
Vol. 12, Issue 4, 767 (2024)

High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system | Editors' Pick

Jinlai Cui^1,2, Jun Zheng^1,2,*, Yupeng Zhu^1,2, Xiangquan Liu^1,2..., Yiyang Wu^1,2, Qinxing Huang^1,2, Yazhou Yang^1,2, Zhipeng Liu^1,2, Zhi Liu^1,2, Yuhua Zuo^1,2 and Buwen Cheng^1,2|Show fewer author(s)

Author Affiliations

¹Key Laboratory of Optoelectronic Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.1364/PRJ.514764 Cite this Article Set citation alerts

Jinlai Cui, Jun Zheng, Yupeng Zhu, Xiangquan Liu, Yiyang Wu, Qinxing Huang, Yazhou Yang, Zhipeng Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng, "High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system," Photonics Res. 12, 767 (2024) Copy Citation Text

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References

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Jinlai Cui, Jun Zheng, Yupeng Zhu, Xiangquan Liu, Yiyang Wu, Qinxing Huang, Yazhou Yang, Zhipeng Liu, Zhi Liu, Yuhua Zuo, Buwen Cheng, "High-speed GeSn resonance cavity enhanced photodetectors for a 50 Gbps Si-based 2 μm band communication system," Photonics Res. 12, 767 (2024)

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