Ultraviolet light in the solar-blind band (200–280 nm) hardly radiates to the Earth’s surface due to the strong atmospheric absorption. Therefore, solar-blind ultraviolet (SBUV) detectors have attracted tremendous interest in the scope of fire monitoring, high-voltage equipment corona discharge monitoring, or biological imaging [1–5]. AlGaN material, with a tunable wide bandgap and high absorption coefficient from 3.4 to 6.2 eV, is one of the most suitable materials for SBUV detectors . Moreover, AlGaN SBUV detectors have the advantage of small-size, low-power-consumption, and easy-integration over the most frequently used photomultiplier tubes that feature high vacuum, high voltage, and huge volume [7–9]. Although considerable progress has been made on AlGaN SBUV detectors in recent years, the performance still cannot meet the requirements of real applications because of the poor crystal quality and -doping efficiency deterioration with increasing Al content [10,11]. In order to obtain optimal device performance on the platform with the current AlGaN material quality and -doping efficiency, the structures have been extensively studied and finely optimized.
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