• Photonics Research
  • Vol. 9, Issue 10, 1907 (2021)
Long Guo1、2, Ke Jiang1、2、4、*, Xiaojuan Sun1、2, Zihui Zhang1、3, Jianwei Ben1、2, Yuping Jia1、2, Yong Wang1、2, and Dabing Li1、2、5、*
Author Affiliations
  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Key Laboratory of Electronic Materials and Devices of Tianjin, School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300401, China
  • 4e-mail: jiangke@ciomp.ac.cn
  • 5e-mail: lidb@ciomp.ac.cn
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    DOI: 10.1364/PRJ.435937 Cite this Article Set citation alerts
    Long Guo, Ke Jiang, Xiaojuan Sun, Zihui Zhang, Jianwei Ben, Yuping Jia, Yong Wang, Dabing Li. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode[J]. Photonics Research, 2021, 9(10): 1907 Copy Citation Text show less
    (a) QCSE in a single quantum well. (b) Energy band diagram of AlGaN SBUV p-i-n photodiode with MQW in the intrinsic depletion region.
    Fig. 1. (a) QCSE in a single quantum well. (b) Energy band diagram of AlGaN SBUV p-i-n photodiode with MQW in the intrinsic depletion region.
    Photodiode structures (a) with and (b) without MQW.
    Fig. 2. Photodiode structures (a) with and (b) without MQW.
    (a) Simulated I-V curves in dark and on illumination for devices SA and SB. (b) Simulated spectral responses for devices SA and SB at 5 V bias.
    Fig. 3. (a) Simulated I-V curves in dark and on illumination for devices SA and SB. (b) Simulated spectral responses for devices SA and SB at 5 V bias.
    Simulated energy bands for devices (a) SA and (b) SB, (c) electron and (d) hole current densities, (e) electron and (f) hole concentrations in dark and on illumination at 5 V bias, respectively.
    Fig. 4. Simulated energy bands for devices (a) SA and (b) SB, (c) electron and (d) hole current densities, (e) electron and (f) hole concentrations in dark and on illumination at 5 V bias, respectively.
    (a) Schematic structure diagram of device SA. (b) Cross-sectional STEM image of device SA. (c) Enlarged STEM image for the MQW region in device SA. (d) Plane-view OM image of the fabricated devices.
    Fig. 5. (a) Schematic structure diagram of device SA. (b) Cross-sectional STEM image of device SA. (c) Enlarged STEM image for the MQW region in device SA. (d) Plane-view OM image of the fabricated devices.
    (a) Photo and dark currents for devices SA and SB. (b) Spectral responses of device SA at zero bias. Inset is the log-scale plot. (c) Bias-dependence of peak responsivity and EQE of device SA. (d) Zero-bias peak responsivity and wavelength of device SA and some reported AlGaN self-powered SBUV detectors [14,15,25,30,34,41–63" target="_self" style="display: inline;">–63].
    Fig. 6. (a) Photo and dark currents for devices SA and SB. (b) Spectral responses of device SA at zero bias. Inset is the log-scale plot. (c) Bias-dependence of peak responsivity and EQE of device SA. (d) Zero-bias peak responsivity and wavelength of device SA and some reported AlGaN self-powered SBUV detectors [14,15,25,30,34,4163" target="_self" style="display: inline;">63].
    Long Guo, Ke Jiang, Xiaojuan Sun, Zihui Zhang, Jianwei Ben, Yuping Jia, Yong Wang, Dabing Li. Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode[J]. Photonics Research, 2021, 9(10): 1907
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