[1] Hall R N, Fenner G E, Kingsley J D, et al.. Coherent light emission from GaAs junctions[J]. Phys Rev Lett, 1962, 9(9): 366-368.

[2] Pan Honggang, Yu Jinlong, Wang Wenrui, et al.. Semiconductor optical amplifier based self- mode locking laser and phenomenon of dimidiate frequency[J]. Chinese J Lasers, 2013, 40(11): 1102006.

[3] Li Xiushan, Ning Yongqiang, Jia Peng, et al.. Rectangular mesa shaped vertical cavity surface emitting laser with shallow surface relief[J]. Chinese J Lasers, 2014, 41(12): 1202005.

[4] Shang Huaiying, Huo Li, Wu Yuanpeng, et al.. Optical coherence imaging system based on a polarization- dependent semiconductor optical amplifier-enabled swept laser[J]. Chinese J Lasers, 2014, 41(11): 1102002.

[5] Liu Hongli, Qian Jun, Xu Zhen, et al.. A frequency tuning and locking system of a deep UV laser for laser cooling of mercury atoms[J]. Chinese J Lasers, 2013, 40(9): 0902005.

[6] Mikulla M. Tapered high- power, high- brightness diode lasers: design and performance[J]. Topics in Applied Physics, 2000, 78: 265-288.

[7] Liu Yonghong, Han Yanxu, Zhang Chunhong, et al.. Semiconductor tapered- amplified laser (TPA) set for Rb cooling system[J]. Acta Sinica Quantum Optica, 2009, 15(1): 91-94.

[8] Ferrari G, Mewes M O, Schreck F, et al.. High-power multiple- frequency narrow- linewidth laser source based on a semiconductor tapered amplifier[J]. Opt Lett, 1999, 24(3): 151-153.

[9] Xiong Y, Carlsten S M L, Repasky K. Design and characteristics of a tapered amplifier diode system by seeding with continuous-wave and mode-locked external cavity diode laser[J]. Optical Engineering, 2006, 45(12): 124205.

[10] Kangara J C B, Hachtel A J, Gillette M C, et al.. Design and construction of cost-effective tapered amplifier systems for laser cooling and trapping experiments[J]. American Journal of Physics, 2014, 82(8): 805-817.

[11] Wang X, Erbert G, Wenzel H, et al.. High-power, spectrally stabilized, near-diffraction-limited 970 nm laser light source based on truncated-tapered semiconductor optical amplifiers with low confinement factors[J]. Semiconductor Science & Technology, 2011, 27(1): 15010-15019.

[12] Kintzer E S, Walpole J N, Chinn S R, et al.. High-power, strained-layer amplifiers and lasers with tapered gain regions[J]. IEEE Photonics Technology Letters, 1993, 5(6): 605-608.

[13] Wei Xing. Near Diffraction Limited High Power Semiconductor[D]. Jilin: Changchun University of Science and Technology, 2007: 2-17.

[14] Zhong Biao. Laser Cooling of the Yb3+ Doped Fluoride Crystal[D]. Shanghai: East China Normal University, 2014: 83-93.

[15] Swallows M D, Loftus T H, Griffith W C, et al.. Techniques used to search for a permanent electric dipole moment of the 199Hg atom and the implications for CP violation[J]. Physical Review A, 2013, 87(1): 012102.