High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note

Yiding Lin; Kwang Hong Lee; Shuyu Bao; Xin Guo; Hong Wang; Jurgen Michel; Chuan Seng Tan

doi:10.1364/PRJ.6.000046

Journals >Photonics Research >Volume 6 >Issue 1 >Page 46 > Article

Photonics Research
Vol. 6, Issue 1, 46 (2018)

High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note

Yiding Lin^1、2、4, Kwang Hong Lee², Shuyu Bao^1、2, Xin Guo¹, Hong Wang¹, Jurgen Michel^2、3, and Chuan Seng Tan^1、2、*

Author Affiliations

¹School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore

²Low Energy Electronic Systems (LEES), Singapore-MIT Alliance for Research and Technology, Singapore 138602, Singapore

³Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

⁴e-mail: liny0075@e.ntu.edu.sg

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DOI: 10.1364/PRJ.6.000046 Cite this Article Set citation alerts

Yiding Lin, Kwang Hong Lee, Shuyu Bao, Xin Guo, Hong Wang, Jurgen Michel, Chuan Seng Tan. High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform: publisher’s note[J]. Photonics Research, 2018, 6(1): 46 Copy Citation Text

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Abstract

This publisher’s note reports corrections to Eq. (1) in [Photon. Res.5, 702 (2017)PRHEIZ2327-9125

10.1364/PRJ.5.000702

Keywords

Optoelectronics Photodetectors Photodiodes Semiconductor materials Thin film devices and applications

Equation (1) was corrected in the article ^[1] from $I_{dark} = {B T}^{1.5} e^{\frac{- E_{a}}{k T}} {\exp [q V / (e 2 k T)] - 1}$ to $I_{dark} = {B T}^{1.5} e^{\frac{- E_{a}}{k T}} (e^{\frac{q V}{2 k T}} - 1)$ The article ^[1] was corrected online as of 27 November 2017.