In this paper, a simple theoretical model combining Monte Carlo simulation with the enthalpy method is provided to simulate the damage resistance of B₄C/Si-sub mirror under X-ray free-electron laser irradiation. Two different damage mechanisms are found, dependent on the photon energy. The optimum B₄C film thickness is determined by studying the dependence of the damage resistance on the film thickness. Based on the optimized film thickness, the damage thresholds are simulated at photon energy of 0.4–25 keV and a grazing incidence angle of 2 mrad. It is recommended that the energy range around the Si K-edge should be avoided for safety reasons.