Quantum Confinement Analysis of Nanostructure in oxidation of SiGe alloys

[in Chinese]; [in Chinese]; [in Chinese]

[1] Kang S K;Ko D H. Wet oxidation behaviors of polycrystalline SiGe films [J]. J. Vac. Sci. Technol. A;2001;19(4): 1617

[2] Tetelin C;Wallart X;Nys J P. Kinetics and mechanism of low temperature atomicoxygen-assisted oxidation of SiGe layers [J]. J. Appl. Phys.;1998;83(5): 2842

[3] Madsen J M;Cui Zhenjiang;Takoudis C G. Low temperature oxidation of SiGe in ozone: ultrathin oxdes [J]. J.Appl. Phys.;2000;87(4): 2046

[4] Huang W;et al. Kinetics and mechanism of nanostructure in oxidation of SiGe alloys[J]. Chin. Phys. Lett.;2002;19(11): 1734

[5] Hellberg P E;Zhang S L;dHeurle F M;et al. Oxidetion of SiGe alloys. I. An experimental study [J]. J. Appl.Phys.;1997;82(11): 5773

[6] Huang Weiqi;et al. Effect of the transient response in SiGe parallelizing PNjunction [J]. J. Mater. Sci. Technol.;1999;15(4): (SCI)

[7] Huang Weiqi;et al. Research on nonlinear of semiconductor photovoltatic effect[J]. Chinese Journal of Scientific Instrument;1999;20(3)

[9] Cai Shaohong;et al. Critical similar theory of generalized phase transition andits universality [J]. Chinese Physics;2000;9(6)