[1] Brauer F, Sabath F, ter Hasebg J L. Susceptibility of IT wk systems to interferences by HPEM[C]Proceedings of 2009 IEEE International Symposium on Electromagic Compatibility. IEEE, 2009: 137.
[2] Klünder C, ter Hasebg J T. Effects of highpower transient disturbances on wireless communication systems operating inside the 2.4 GHz ISM b[C]Proceedings of 2010 IEEE International Symposium on Electromagic Compatibility. IEEE, 2010: 359363.
[3] Nitsch D, Camp M, Sabath F, et al. Susceptibility of some electronic equipment to HPEM threats[J]. IEEE Transactions on Electromagnetic Compatibility, 46, 380-389(2004).
[4] Månsson D, Thottappillil R, Nilsson T, et al. Susceptibility of civilian GPS receivers to electromagnetic radiation[J]. IEEE Transactions on Electromagnetic Compatibility, 50, 434-437(2008).
[5] Wu Jie, Rosenbaum E. Gate oxide reliability under ESD-like pulse stress[J]. IEEE Transactions on Electron Devices, 51, 1192-1196(2004).
[6] Greetsai V N, Kozlovsky A H, Kuvshinnikov V M, et al. Response of long lines to nuclear high-altitude electromagnetic pulse (HEMP)[J]. IEEE Transactions on Electromagnetic Compatibility, 40, 348-354(1998).
[7] Chahine I, Kadi M, Gaboriaud E, et al. Characterization and modeling of the susceptibility of integrated circuits to conducted electromagnetic disturbances Up to 1 GHz[J]. IEEE Transactions on Electromagnetic Compatibility, 50, 285-293(2008).
[8] Kim K, Iliadis A A. Impact of microwave interference on dynamic operation and power dissipation of CMOS inverters[J]. IEEE Transactions on Electromagnetic Compatibility, 49, 329-338(2007).
[9] Kim K, Iliadis A A. Critical bit errs in CMOS digital inverters due to pulsed electromagic interference[C]Proceedings of 2007 International Conference on Electromagics in Advanced Applications. IEEE, 2007.
[10] Iliadis A A, Kim K. Theoretical foundation for upsets in CMOS circuits due to high-power electromagnetic interference[J]. IEEE Transactions on Device and Materials Reliability, 10, 347-352(2010).
[11] You Hailong, Lan Jianchun, Fan Juping, et al. Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave[J]. Acta Physica Sinica, 61, 108501(2012).
[12] Kte S, Camp M, Garbe H. Hardware software simulation of transient pulse impact on integrated circuits[C]Proceedings of 2005 International Symposium on Electromagic Compatibility. IEEE, 2005.
[13] Camp M, Kte S, Garbe H. Classification of the destruction effects in CMOSdevices after impact of fast transient electromagic pulses[M]Sabath F, Mokole E L, Schenk U, et al. Ultrawideb, shtpulse electromagics 7. New Yk: Springer, 2007.
[14] Wang Haiyang, Li Jiayin, Li Hao, et al. Experimental study and SPICE simulation of CMOS inverters LATCH-Up effects due to high power microwave interference[J]. Progress in Electromagnetics Research, 87, 313-330(2008).
[15] Wang Haiyang, Hu Fei, Hu Biao, et al. acteristics of microwave breakdown in cavity filter under high power microwave environment[C]Proceedings of 2020 IEEE MTTS International Conference on Numerical Electromagic Multiphysics Modeling Optimization (NEMO). IEEE, 2020.
[16] Zhang Yuhang, Chai Changchun, Liu Yang, et al. Modeling and understanding of the thermal failure induced by high power microwave in CMOS inverter[J]. Chinese Physics B, 26, 058502(2017).
[17] Liang Qishuai, Chai Changchun, Wu Han, et al. Mechanism analysis and thermal damage prediction of high-power microwave radiated CMOS circuits[J]. IEEE Transactions on Device and Materials Reliability, 21, 444-451(2021).
[18] Liu Yuqian, Chai Changchun, Zhang Yuhang, et al. Physics-based analysis and simulation model of electromagnetic interference induced soft logic upset in CMOS inverter[J]. Chinese Physics B, 27, 068505(2018).
[19] Chen Jie, Du Zhengwei. Device simulation studies on latch-up effects in CMOS inverters induced by microwave pulse[J]. Microelectronics Reliability, 53, 371-378(2013).
[20] Liu Yuqian, Chai Changchun, Wu Han, et al. Mechanism of AlGaAs/InGaAs pHEMT nonlinear response under high-power microwave radiation[J]. IEEE Journal of the Electron Devices Society, 8, 731-737(2020).
[21] Zhou Liang, San Zhengwei, Hua Yujie, et al. Investigation on failure mechanisms of GaN HEMT caused by high-power microwave (HPM) pulses[J]. IEEE Transactions on Electromagnetic Compatibility, 59, 902-909(2017).
[22] Chai Changchun, Ma Zhenyang, Ren Xingrong, et al. Hardening measures for bipolar transistors against microwave-induced damage[J]. Chinese Physics B, 22, 068502(2013).
[23] Liu Yang, Chai Changchun, Yu Xinhai, et al. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse[J]. Acta Physica Sinica, 65, 038402(2016).
[24] Xi Xiaowen, Chai Changchun, Zhao Gang, et al. Damage effect and mechanism of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse[J]. Chinese Physics B, 25, 048503(2016).
[25] Xi Xiaowen, Chai Changchun, Liu Yang, et al. Analysis of the damage threshold of the GaAs pseudomorphic high electron mobility transistor induced by the electromagnetic pulse[J]. Chinese Physics B, 25, 088504(2016).
[26] Kim K C. High power microwave interference effects on analog digital circuits in IC’s[D]. Washington, DC: University of Maryl, 2007: 117130.
[27] Zhi Jiang, Zhuang Yiqi, Li Cong, et al. Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor[J]. Chinese Physics B, 25, 027701(2016).
[28] Radasky W A, Baum C E, Wik M W. Introduction to the special issue on high-power electromagnetics (HPEM) and intentional electromagnetic interference (IEMI)[J]. IEEE Transactions on Electromagnetic Compatibility, 46, 314-321(2004).
[29] Khairurrijal, No F A, Sukirno. Modeling of stressinduced leakage current in thin gate oxides[C]. Proceedings of the 9th International Conference on Neural Infmation Processing. Computational Intelligence f the EAge. 2002.
