[1] Chen Yixin, Shen Guangdi, Meng Lili, et al. Improved extraction efficiency of AlGaInP light emitting diodes by nano-scale surface roughness［J］. Journal of Optoelectronics·Laser, 2011, 22(10): 1452-1454.
[2] Song Pengcheng, Wen Shangsheng, Shang Jun, et al. A dimming method for RGB LED based on three channels′ PWM［J］. Acta Optica Sinica, 2015, 35(2): 0223001.
[3] Moon H C, Digantac D, Varde P V, et al. Light emitting diodes reliability review［J］. Microelectronics Reliability, 2012, 52(5): 762-782.
[4] Ryu H S, Min J P, Oh S K, et al. Vertical-injection AlGaInP LEDs with n-AlGaInP nanopillars fabricated by self-assembled ITO-based nanodots［J］. Nanoscale Research Letters, 2015, 10(1): 356.
[5] Han Jun, Li Jianjun, Deng Jun, et al. High bright AlGaInP red light LED［J］. Journal of Optoelectronics·Laser, 2008, 19(2): 171-173.
[6] Song Pengcheng, Wen Shangsheng, Chen Congying, et al. Research on color mixing based on RGBW-LEDs［J］. Acta Optica Sinica, 2015, 35(9): 0923004.
[7] Kuo D M, Wang S J, Uang K M, et al. Enhanced light output of AlGaInP light emitting diodes using an indium-zinc oxide transparent conduction layerand electroplated metal substrate［J］. Applied Physics Express, 2011, 4(1): 012101.
[8] Zhang Yonghui, Guo Weiling, Qin Yuan, et al. Effects of ITO on proprieties of novel AlGaInP red LED［J］. Acta Optica Sinica, 2010, 30(8): 2402-2405.
[9] Ma Li, Shen Guangdi, Chen Yixin, et al. Investigation of the saturation characteristic and lifetime of the novel AlGaInP lightemitting diodes［J］. Acta Physica Sinica, 2014, 63(3): 037201.
[10] Han Jun, Li Jianjun, Deng Jun, et al. Wide reflected angle DBR red light LED［J］. Journal of Optoelectronics·Laser, 2008, 19(4): 456-458.
[11] Yu Xiaodong, Han Jun, Li Jianjun, et al. High brightness AlGaInP LED with coupled distributed Bragg reflector［J］. Chinese Journal of Semiconductiors, 2007, 28(1): 100-103.
[12] Cao Mingde. Studies of DBR in high-brightness AlGaInP LED［D］. Guangzhou: South China Normal University, 2002.
