• Journal of Semiconductors
  • Vol. 40, Issue 9, 091001 (2019)
Xin Cong1、2, Miaoling Lin1、2, and Ping-Heng Tan1、2、3
Author Affiliations
  • 1State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Academy of Quantum Information Science, Beijing 100193, China
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    DOI: 10.1088/1674-4926/40/9/091001 Cite this Article
    Xin Cong, Miaoling Lin, Ping-Heng Tan. Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure[J]. Journal of Semiconductors, 2019, 40(9): 091001 Copy Citation Text show less

    Abstract

    Research on two-dimensional (2D) materials and related van der Waals heterostructures (vdWHs) is intense and remains one of the leading topics in condensed matter physics. Lattice vibrations or phonons of a vdWH provide rich information, such as lattice structure, phonon dispersion, electronic band structure and electron–phonon coupling. Here, we provide a mini review on the lattice vibrations in vdWHs probed by Raman spectroscopy. First, we introduced different kinds of vdWHs, including their structures, properties and potential applications. Second, we discussed interlayer and intralayer phonon in twist multilayer graphene and MoS2. The frequencies of interlayer and intralayer modes can be reproduced by linear chain model (LCM) and phonon folding induced by periodical moiré potentials, respectively. Then, we extended LCM to vdWHs formed by distinct 2D materials, such as MoS2/graphene and hBN/WS2 heterostructures. We further demonstrated how to calculate Raman intensity of interlayer modes in vdWHs by interlayer polarizability model.
    $ \left(\omega_{i}\right)^{2} { u}_{i} = \dfrac{1}{2 {\text{π}}^{2} c^{2} \mu} { D} { u}_{i}, $(1)

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    $ \begin{split} & \omega\left(\mathrm{S}_{N,N-i}\right) = \dfrac{1}{{\text{π}} \mathrm{c}} \sqrt{\alpha_{0}^{\scriptstyle\text{‖}} / \mu} \sin (i {\text{π}} / 2 N), \\ & \omega\left(\mathrm{LB}_{N,N-i}\right) = \dfrac{1}{{\text{π}} \mathrm{c}} \sqrt{\alpha_{0}^{\perp} / \mu} \sin (i {\text{π}} / 2 N). \end{split} $(2)

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    $ v_{j}^{(i)} = \cos [i(2 j-1) {\text{π}} / 2 N]. $(3)

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    $\begin{split} & \omega({\rm S}_{N,N-i}) = \omega({\rm S}_{\rm{bulk}}) {\rm{sin}}(i {\text π}/ 2 N), \\ & \omega({\rm{LB}}_{N,N-i}) = \omega({\rm{LB}}_ {\rm{bulk}}) {\rm{sin}} (i {\text{π}}/ 2 N) . \end{split} $(4)

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    Xin Cong, Miaoling Lin, Ping-Heng Tan. Lattice vibration and Raman scattering of two-dimensional van der Waals heterostructure[J]. Journal of Semiconductors, 2019, 40(9): 091001
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