• Chinese Journal of Quantum Electronics
  • Vol. 20, Issue 2, 157 (2003)
[in Chinese], [in Chinese], [in Chinese], [in Chinese]..., [in Chinese] and [in Chinese]|Show fewer author(s)
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimized Design Mode of a Novel Vertical-Cavity Surface-emitting Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(2): 157 Copy Citation Text show less
    References

    [1] Iga K, Koyama F, Kinoshita S. Surface emitting semiconductor lasers [J]. IEEE J. Quantum Electron, 1988, 24:1845-1855

    [2] Soda H, Iga K, Kitahara C et al. GaInAsP/InP surface emitting injection lasers [J]. Japan. J. Appl. Phys, 1979,18:2329-2320

    [6] Schubert E F, Tu L W et al. Elimination of heterojunction band discontinuities by modulation doping [J]. Appl.Phys. Lett, 1992, 60:466-468

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optimized Design Mode of a Novel Vertical-Cavity Surface-emitting Laser[J]. Chinese Journal of Quantum Electronics, 2003, 20(2): 157
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