• Chinese Journal of Quantum Electronics
  • Vol. 42, Issue 2, 165 (2025)
XIAO Zhenkun1,2, WEI Wenqing1,2, DENG Hu1,2,*, and GUO Jin1
Author Affiliations
  • 1School of Information Engineering, Southwest University of Science and Technology, Mianyang 621010, China
  • 2Tianfu Institute of Research and Innovation, Southwest University of Science and Technology, Chengdu 610299, China
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    DOI: 10.3969/j.issn.1007-5461.2025.02.002 Cite this Article
    Zhenkun XIAO, Wenqing WEI, Hu DENG, Jin GUO. Comparative analysis of sampling methods for Fourier single⁃pixel imaging[J]. Chinese Journal of Quantum Electronics, 2025, 42(2): 165 Copy Citation Text show less

    Abstract

    Fourier single-pixel imaging technology is one sort of single-pixel imaging technology that provides both outstanding image quality and high imaging efficiency. When utilizing this technology, an efficient sampling approach is crucial to enhance the reconstruction quality for images with various attributes. In this work, the implementation principles and processes of three commonly used sampling methods for Fourier single-pixel imaging, namely circular sampling, Gaussian random sampling, and adaptive sampling, are studied. Taking optimal sampling as a reference, the quality of reconstructed images of the four sampling methods at various sample rate is simulated and compared, with a focus on the benefits and drawbacks of the four sampling techniques in processing images with various attributes. The results demonstrate that for images with various spectral energy distribution characteristics, the four sampling methods exhibit distinct peak signal-to-noise ratios in reconstructed images, and each sampling method has its own optimal applicability. This result will provide important reference for how to efficiently select the best sampling method to reconstruct the images with various attributes.
    Zhenkun XIAO, Wenqing WEI, Hu DENG, Jin GUO. Comparative analysis of sampling methods for Fourier single⁃pixel imaging[J]. Chinese Journal of Quantum Electronics, 2025, 42(2): 165
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