Author Affiliations
State Key Laboratory of Advanced Technology for Material Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, Chinashow less
1. Powder XRD patterns of Cu2SnSe3-xTex samples after PAS sintering (a) and corresponding enlarge view near 2θ=53° (b)
2. Field emission scanning electron microscopies of freshly fractured surfaces of samples Cu2SnSe3 (a) and Cu2SnSe2.9Te0.1 (b)
3. Backscattered electron images of the polished surfaces for samples Cu2SnSe2.9Te0.1 (a) and Cu2SnSe2.85Te0.15 (b) with elemental distribution mappings of Cu2SnSe2.9Te0.1(c-f)
4. Temperature dependent electrical conductivity (a), Seebeck coefficient (b) and power factor (c) of Cu2SnSe3-xTex samples
5. Relationship between carrier concentration and Seebeck coefficient for Cu2SnSe3-xTex and Cu2Sn1-yInySe2.9Te0.1 samples
6. Temperature dependent thermal conductivity for Cu2SnSe3-xTex samples
7. Temperature dependent ZT for Cu2SnSe3-xTex samples
8. Temperature dependent electrical conductivity (a), Seebeck coefficient (b) and power factor (c) for Cu2Sn1-yInySe2.9Te0.1 samples
9. Temperature dependent thermal conductivity (a) and ZT (b) for Cu2Sn1-yInySe2.9Te0.1 samples
Sample | σ/(×104, S·m-1)
| S/
(μV·K-1)
| n/(×1017, cm-3)
| μ/(cm2·
V-1·s-1)
|
---|
Cu2SnSe3 | 0.02 | 472.18 | 6.25 | 24.92 | Cu2SnSe2.99Te0.01 | 0.08 | 408.07 | 24.34 | 21.04 | Cu2SnSe2.96Te0.04 | 0.13 | 294.12 | 53.77 | 15.68 | Cu2SnSe2.93Te0.07 | 0.07 | 402.62 | 40.29 | 10.14 | Cu2SnSe2.9Te0.1 | 0.11 | 298.21 | 59.63 | 11.67 | Cu2SnSe2.85Te0.15 | 0.10 | 356.49 | 21.27 | 27.98 | Cu2SnSe2.8Te0.2 | 0.13 | 241.73 | 24.05 | 21.64 |
|
Table 1. Electrical conductivities (σ), Seebeck coefficients (S), carrier concentrations (n) and carrier mobilities (μ) of Cu2SnSe3-xTex samples at room temperature
Sample | σ/(×104, S·m-1)
| S/ (μV·K-1)
| n/(×1019, cm-3)
| μ/(cm2·V-1·s-1)
|
---|
Cu2SnSe2.9Te0.1 | 0.11 | 298.21 | 0.59 | 11.68 | Cu2Sn0.995In0.005Se2.9Te0.1 | 0.97 | 220.50 | 4.35 | 13.95 | Cu2Sn0.99In0.01Se2.9Te0.1 | 1.26 | 185.79 | 7.15 | 10.99 | Cu2Sn0.985In0.015Se2.9Te0.1 | 1.50 | 159.47 | 11.36 | 8.25 | Cu2Sn0.98In0.02Se2.9Te0.1 | 1.67 | 152.91 | 10.54 | 10.08 | Cu2Sn0.975In0.025Se2.9Te0.1 | 2.07 | 130.39 | 20.60 | 6.28 | Cu2Sn0.97In0.03Se2.9Te0.1 | 2.27 | 120.35 | 20.00 | 7.09 |
|
Table 2. Electrical conductivities (σ), Seebeck coefficients (S), carrier concentrations (n) and carrier mobilities (μ) of Cu2Sn1-yInySe2.9Te0.1 samples at room temperature