• Infrared and Laser Engineering
  • Vol. 36, Issue 4, 439 (2007)
[in Chinese]1、*, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]3
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Cryogenic characteristics of the infrared detector specific pre-amplifier[J]. Infrared and Laser Engineering, 2007, 36(4): 439 Copy Citation Text show less
    References

    [5] CLARK W F,El-Kareh B,PIRES R G,et al.Low temperature CMOS -a brief review[J].Components,Hybrids,and Manufacturing Technology IEEE Transactions,1992,15(3):397-404.

    [6] PLUMMER J D.Low temperature CMOS devices and technology[C].Electron Devices Meeting,1986.

    [7] FRIZE H G,RICHARD C J,YORKTOWN H,et al.Liquid Nitrogen Cooled CMOS[C].International Solid-State Circuits Conference,1986.

    [8] KIRSCHMAN R K.Low-temperature electronics[J].Circuits and Devices Magazine,1990,6(2):12-24.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Cryogenic characteristics of the infrared detector specific pre-amplifier[J]. Infrared and Laser Engineering, 2007, 36(4): 439
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