• Acta Optica Sinica
  • Vol. 30, Issue 5, 1406 (2010)
Li Chunxia1、*, Dang Suihu1, and Han Peide2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/aos20103005.1406 Cite this Article Set citation alerts
    Li Chunxia, Dang Suihu, Han Peide. Vacancies Effects on Electronic Structure and Optical Properties of CdS[J]. Acta Optica Sinica, 2010, 30(5): 1406 Copy Citation Text show less

    Abstract

    Geometrical structure of CdS with vacancy was optimized by using density functional theory (DFT) based on first-principle ultrasoft pseudopotential method. Optimized results showed that the vacancy resulted in local lattice distortion and the relaxation of neighboring atoms. Then vacancy effects on electronic structure (energy-band structure and electron-state density) of CdS were analyzed. The results revealed that S vacancy made the band gap narrower and Cd vacancy made it wider,but CdS with S and Cd vacancy were direct band gap semiconductor. The optical properties of CdS with vacancies were investigated. The results indicated that changes on optical properties mainly focused on low-energy region because of the change of electronic structure of atom neighbor vacancy.
    Li Chunxia, Dang Suihu, Han Peide. Vacancies Effects on Electronic Structure and Optical Properties of CdS[J]. Acta Optica Sinica, 2010, 30(5): 1406
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