Temperature effect of InAlSb infrared detectors on photoelectric properties by molecular beam epitaxy

Chen Gang; Li Mo; Lv Yanqiu; Zhu Xubo; Cao Xiancun

doi:10.3788/irla201746.1204003

[1] Ashley T, Burke T M, Emeny M T, et al. Epitaxial InSb for elevated temperature operation of large IR focal plane arrays [C]//SPIE, 2003, 5074: 95-102.

[2] Haigh M K, Nash G R, Smith S J, et al. Mid-infrared AlxIn1-xSb light-emitting diodes [J]. Appl Phys Lett, 2007, 90: 231116.

[3] Yao G S, Zhang L X, Zhang X F, et al. Mesa etching process for InAs/GaSb SLs grown by MBE[J]. Infrared and Laser Engineering, 2015, 44(3): 951-954.

[4] Klipstein P, Calahorra Z, Zemel A, et al. 3rd generation infrared detector program at SCD[C]//SPIE, 2006, 5406:222-229.

[5] Evirgen A, Abautret J, Perez J P, et al. Midwave infrared InSb nBn photodetector[J]. Electronics Letters, 2014, 50: 1472-1473.

[6] Perez J P, Evirgen A, Abautret J, et al. MWIR InSb detector with nBn architecture for high operating temperature[C]//SPIE, 2015, 9370: 93700N.

[7] Dai N, Brown F, Doezema R E, et al. Determination of the concentration and temperature dependence of the fundamental energy gap in AlxIn1-xSb[J]. Applied Physics Letters, 1998, 73: 3132-3134.

[8] Isomura S, Prat F G D, Woolley J C. Electroreflectance spectra of AlxIn1-xSb alloys[J]. Physics Status Solidi A, 1974, 65: 213-219.

[9] Komkov O S, Semenov A N, Firsov D D, et al. Optical properties of epitaxial AlxIn1-xSb alloy layers [J]. Semiconductors, 2011, 45: 1425-1429.

[10] Klin O, Klipstein P C, Jacobsohn E, et al. Molecular beam epitaxy grown In1-xAlxSb/InSb structures for infrared detectors [J]. Journal of Vacuum Science and Technology, 2006, B24(3): 1607-1612.

[11] Varshni Y P. Temperature dependence of the energy gap in semiconductors[J]. Physics, 1967, 34: 149-154.