• Infrared Technology
  • Vol. 44, Issue 6, 560 (2022)
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Position-Dependent Conductivity Transition by Intrinsic Defects in Cd1-xxTe Crystal[J]. Infrared Technology, 2022, 44(6): 560 Copy Citation Text show less
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    [4] Dhar V, Garg A K, Bhan R K. Impact of CdTe/CdZnTe substrate resistivity on performance degradation of long-wavelength n(+)-on-p HgCdTe infrared photodiodes[C]//IEEE Trans. Electron Devices, 2000, 47: 978-986.

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    [12] Paufler P. Landolt -Bornstein. Numerical data and functional relationships in science and technology, New Series. Editors in Chief: K -H Hellwege, O Madelung, Group III: Crystal and Solid State Physics, Vol. 7: Crystal Structure Data of Organic Compounds[M]. New York: Springer, 1973.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Position-Dependent Conductivity Transition by Intrinsic Defects in Cd1-xxTe Crystal[J]. Infrared Technology, 2022, 44(6): 560
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