Position-Dependent Conductivity Transition by Intrinsic Defects in Cd1-xxTe Crystal

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared Technology >Volume 44 >Issue 6 >Page 560 > Article

Infrared Technology
Vol. 44, Issue 6, 560 (2022)

Position-Dependent Conductivity Transition by Intrinsic Defects in Cd_1-xxTe Crystal

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Position-Dependent Conductivity Transition by Intrinsic Defects in Cd_1-xxTe Crystal[J]. Infrared Technology, 2022, 44(6): 560 Copy Citation Text

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Abstract

In this study, the formation of a position-dependent conductivity transition in Cd1 -xZnxTe crystals is investigated. The results indicate that the transition from p-to n-type Cd1-xZnxTe (x = 0.04) can be ascribed to the formation of the VCd-Cdi interface. Cd vacancies (VCd) are easily generated in the Te-rich condition crystal growth process and are responsible for the p-type conductivity. However, Cd vacancies are filled and the n-type defect, Cd interstitial (Cdi), form in the Cd-rich condition. This leads to the transition from p-type to n-type conductivity during the growth of Cd1-xZnxTe (x = 0.04).

Keywords

Cd1-xZnxTe, position-dependent conductivity transi

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