The double hetero-junction InP/InGaAs/InP material is grown by molecular beam epitaxy. The back-illuminated 512×1 elements InGaAs photo-detectors are fabricated using the improved process including the profile etching, effective passivation and ohmic contacts. Response spectra of 512×1 elements InGaAs photo-detectors range from 0.95 to 1.7 μm and the average peak resoponsivity is 0.9 A/W. 512×1 elements InGaAs photo-detectors are connected to readout circuit with capacitive transimpedance amplifer (CTIA) input stage by transitional base plane using In bump flip chip so that 512×1 elements InGaAs module is fabricated. The 1024×1 elements InGaAs FPA are fabricated using the two 512×1 elements InGaAs modules joint by interlaced effective pixels and are sealed in metal package with thermal electrical cooler (TEC). The response non-uniformity, blind pixels ratio and average peak detectivity of 1024×1 elements InGaAs FPAs are 8%, 1% and 7×1011(cm·Hz1/2)/W, respectively at room temperature. The working temperature of FPAs assembly is stabilized by using TEC, power consumption of FPAs assembly at 5 ℃ is 3.10 W.