[1] Zhou Zhou, Zhou Jian, Sun Xiaowei, et al.. Design of an irregularly shaped DBR for thin film solar cells [J]. Acta Optica Sinica, 2011, 31(7): 0731002.
[2] D Knipp, R A Street, H Stiebig, et al.. Vertically integrated amorphous silicon color sensor arrays [J]. IEEE Trans Electron Dev, 2006, 53(7): 1551-1558.
[3] R M Ambrosi, R Street, B Feller, et al.. X-ray tests of a microchannel plate detector and amorphous silicon pixel array readout for neutron radiography [J]. Nucl Instrum & Methods Phys Res A, 2007, 572(2): 844-852.
[4] A J Flewitt, S Lin, W I Milne, et al.. Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors [J]. J Non-Cryst Solids, 2006, 352(9-20): 1700-1703.
[5] X M Deng, H Fritzsche. Light-induced perturbation of the high-temperature equilibrium in phosphorus-doped a-SiH [J]. Phys Rev B, 1988, 36(17): 9378-9380.
[6] M H Brodsky, M Cardona, J J Cuomo. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering [J]. Phys Rev B, 1977, 16(8): 3556-3571.
[7] M Cardona. Vibrational spectra of hydrogen in silicon and germanium [J]. Phys Status Solidi B, 1983, 118(2): 463-481.
[8] W B Pollard, G Lucovsky. Phonons in polysilane alloy [J]. Phys Rev B, 1982, 26(6): 3172-3180.
[9] A H M Smets, M C M van de Sanden. Relation of the Si-H stretching frequency to the nanostructural Si-H bulk environment [J]. Phys Rev B, 2007, 76(7): 073202.
[10] A R Forouhi, I Bloomer. Optical dispersion relations for amorphous semiconductors and amorphous dielectrics [J]. Phys Rev B, 1986, 34(10): 7018-7026.
[11] G E Jellison, F A Modine. Parameterization of the optical functions of amorphous materials in the interband region [J]. Appl Phys Lett, 1996, 69(3): 371-373.
[12] N Laidani, R Bartali, G Gottardi, et al.. Optical absorption parameters of amorphous carbon films from Forouhi-Bloomer and Tauc-Lorentz models: a comparative study [J]. J Phys: Condens Matter, 2008, 20(1): 015216.
[13] W S Wei, G Y Xu, J L Wang, et al.. Raman spectra of intrinsic and doped hydrogenated nanocrystalline silicon films [J]. Vacuum, 2007, 81(5): 656-662.
[14] N Zotov, M Marinov, N Mousseau,et al.. Dependence of the vibrational spectra of amorphous silicon on the defect concentration and ring distribution [J]. J Phys: Condens Matter, 1999, 11(48): 9647-9658.
[15] J Koh, Y W Lu, C R Wronski, et al.. Correlation of real time spectroellipsometry and atomic force microscopy measurements of surface roughness on amorphous semiconductor thin films [J]. Appl Phys Lett, 1996, 69(9): 1297-1299.
[16] W B Jackson, S M Kelso, C C Tsai, et al.. Energy dependence of the optical matrix element in hydrogenated amorphous and cystalline silicon [J]. Phys Rev B, 1985, 31(8): 5187-5198.
[17] J D Joannopoulos, G Lucovsky. The Physics of Hydrogenated Amorphous Silicon [M]. Berlin: Springer-Verlag, 1984.
[18] J Tauc, R Grigorovici, A Vancu. Optical properties and electronic structure of amorphous germanium [J]. Phys Stat Sol, 1966, 15(2): 627-637.
