• Journal of Infrared and Millimeter Waves
  • Vol. 34, Issue 5, 528 (2015)
GAN Kai-Xian1, WANG Lin2, and XING Huai-Zhong1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.11972/j.issn.1001-9014.2015.05.003 Cite this Article
    GAN Kai-Xian, WANG Lin, XING Huai-Zhong. Simulation of the electrical properties of Al2O3/GaSb p-MOSFET[J]. Journal of Infrared and Millimeter Waves, 2015, 34(5): 528 Copy Citation Text show less
    References

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    [2] DEL Alamo, JESUS A. Nanometre-scale electronics with III-V compound semiconductors [J]. Nature, 2011, 479(7373): 317-323.

    [3] WANG Chen, XU Min, GU Jiang-Jiang, et al. GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric [J]. Electrochemical and Solid-State Letters, 2012, 15(3): H51-H54.

    [4] HONG Ming-Hwei, KWO J Raynien, TSAI Pei-chun, et al. III-V metal-oxide-semiconductor field-effect transistors with high kappa dielectrics [J]. Japanese Journal Of Applied Physics, 2006, 46(5B): 3167-3180.

    [5] YE P D, WILK G D, YANG B, et al. GaAs metal-oxide-semiconductor field-effect transistor with nanometerthin dielectric grown by atomic layer deposition [J]. Applied Physics Letters, 2003, 83(1): 180-182.

    [6] PASSLACK M, ABROKWAH J K, DROOPAD R, et al.Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor [J]. IEEE Electron Device Letters, 2002, 23(9): 508-510.

    [7] ALI A, MADAN H S, KIRK A P, et al. Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3 [J]. Applied Physics Letters, 2010, 97(14): 143502.

    [8] WRACHIEN N, CESTER A, WU Y Q, et al. Effects of Positive and Negative Stresses on III-V MOSFETs With Al2O3 Gate Dielectric [J]. IEEE Electron Devices Letters, 2011, 32(4): 488-490.

    [9] HAYWOOD SK, HENRIQUES AB, MASON NJ. et al. Growth of GaSb by MOVPE [J]. Semiconductor Science and Technology, 1988, 3(4): 315-320.

    [10] ROBERTSON J, FALABRETTI B. Band offsets of high K gate oxides on III-V semiconductors [J]. Journal Of Applied Physics, 2006, 100(1): 014111-1-014111-8.

    [11] DUTTA P S, BHAT H L, KUMAR V. The physics and technology of gallium antimonide: An emerging optoelectronic material [J]. Journal Of Applied Physics, 1997, 81(9): 5821-5870.

    [12] ROBERTSON John. Model of interface states at III-V oxide interfaces [J]. Applied Physics Letters, 2009, 94(15): 152104-1-152104-3.

    [13] XU Min, WANG Run-Sheng, YE Pei-De D, et al. GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited Al2O3 as Gate Dielectric [J]. IEEE Electron Device Letters, 2011, 32(7): 883-885.

    [14] HU Hui-Yong, CUI Xiao-Ying, ZHANG He-ming, et al. Study on Strained Si PMOSFET Current Characteristic [J]. Chinese Journal of Electron Devices, 2010, 33(4): 438-441.

    GAN Kai-Xian, WANG Lin, XING Huai-Zhong. Simulation of the electrical properties of Al2O3/GaSb p-MOSFET[J]. Journal of Infrared and Millimeter Waves, 2015, 34(5): 528
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