[1] SIZOV F, ZABUDSKY V, DVORETSKII S, et al. Two-color detector: Mercury-cadmium-telluride as a terahertz and infrared detector[J]. Applied Physics Letters, 2015, 106: 082104.
[2] MELKONIAN L, BANGS J, ELIZONDO L, et al. Performance of MWIR and SWIR HgCdTe-based focal plane arrays at high operating temperatures[J]. Proceedings of SPIE, 2010: 76602W.
[3] ROGALSKI A, ANTOSZEWSKI J, FARAONE L. Third-generation infrared photodetector arrays[J]. Journal of Applied Physics, 2009,105: 091101.
[4] PARK BA, MUSCA CA, WESTERHAUT RJ, et al. MWIR HgCdTe photodiodes based on high-density plasma-indiuced type conversion[J]. Semiconductor Science and Technology, 2008, 23: 095027.
[5] TRIBOLET P, CHATARD JP, COSTA P, et al. MCT technology challenges for mass production[J]. Journal of Electronic Materials, 2001, 30(6): 574.
[6] CABANSKI W, BREITER R, KOCH R, et al. 3rd gen focal plane array IR detection modules at AIM[J]. Proceedings of SPIE, 2011, 4369: 547.
[7] TRIBOLET P, CHORIER P, MANISSADJIAN A, et al. High performance infrared detectors at Sofradir[J]. Proceedings of SPIE, 2000, 4028: 438.
[8] YIN WT, ZHOW WH, HUANG J. Etch induced damage of HgCdTe caused by inductively coupled plasma etching technique[J]. Proceedings of SPIE, 2010: 76584A.
[9] BAVLET JP, ZANATTA JP, CHANCE D, et al. Recent Development in Infrared FPAs with Multispectral 1282 IRCMOS[J].Proceedings of SPIE, 2002, 4650: 128.
[10] DVORETSKY SA, VARAVIN VS, MIKHAILOV NN, et al. MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAsheterostructures[J].Proceedings of SPIE, 2005: 59640A.
[11] JIANG JT, TSAO S, O’SULLIVAN T, et al. Fabrication of indium bumps for hybrid infrared focal plane array applications[J]. Infrared Physics & Technology, 2004, 45: 143.
[12] HUANG Y, LIN C, YE ZH, et al. Reflow flip-chip bonding technology for infrared detectors[J]. Journal of Micromechanics and Microengineering, 2015, 25: 085009.
