Effect of the Nitrogen Incorporation on the Microstructure and Photoelectric Properties of N Type Nanocrystalline Silicon Thin Films

[1] Yao Y, Yao J, Narasimhan V K, et al. Nat. Commun., 2012, 3: 664.

[2] Fathi E, Vygranenko Y, Vieira M, et al. Applied Surface Science, 2011, 257: 8901.

[3] Eun-Chel C, Martin A G, Gavin C. Advances in Opto Electronics, 2007, 10: 1155.

[4] Kerr M J, Cuevas A. Semicond. Scie. Technol., 2002, 17: 166.

[5] Schmidt J, Aberle A G. J. Appl. Phys., 1999, 85: 3626.

[6] Mota-Pineda E, Meléndez-Lira M, Zapata-Torres M, et al. Journal of Applied Physics, 2010, 108: 094323.

[7] Wei-Wei C, Xiao-Hua M, Bin H, et al. Applied Physics Letters, 2014, 105: 173507.

[8] Yan B, Yue G, Sivec L, et al. Applied Physics Letters, 2011, 99: 113512.

[9] Lambertz A, Grundler T, Finger F. Journal of Applied Physics, 2011, 109: 113109.

[10] Marinov M, Zotov N. Physical Review B, 1997, 55: 2938.

[11] Wei W, Xu G, Wang J, et al. Vacuum, 2007, 81: 656.

[12] Gracin D, Sancho-Paramon J, Juraic K, et al. Micron., 2009, 40: 56.

[13] He L, Inokuma T, Kurata Y, et al. Journal of Non-Crystalline Solids, 1995, 185: 249.

[14] Rebib F, Tomasella E, Aida S, et al. Plasma Processes and Polymers, 2007, 4: S59.

[15] Han D, Wang K, Owens J M, et al. Journal of Applied Physics, 2003, 93: 3776.

[16] Molinari M, Rinnert H, Vergnat M. Applied Physics Letters, 2001, 79: 2172.

[17] Zongyan W, Yuehua S, Yagu Y. Chinese Journal of Semiconductors, 1984, 5: 113.

[18] Gaskell P H, Wallis D J. Phys. Rev. Lett., 1996, 76: 66.

[19] Jun K H, Ouwens J D, Schropp R E I, et al. Journal of Applied Physics, 2000, 88: 4881.

[20] Daxing H, Keda W, Jessica M O, et al. Journal of Appled Physics, 2003, 93: 3776.

[21] Seung Y M, Kobsak S, Yasutoshi Y, et al. Solar Energy Materials & Solar cells, 2008, 92: 639.

[22] Salvatore C, Emel-Sungur O, Rosario R, et al. Applied Physics Letters, 2014, 115: 043103.