[1] Yuan Y, Chai X L, Yang C A et al. 2.75-μm mid-infrared GaSb-based quantum well lasers with quinary alloy barrier[J]. Chinese Journal of Lasers, 47, 0701026(2020).

[2] Lü Z R, Zhang Z K, Wang H et al. Research progress on 1.3 μm semiconductor quantum-dot lasers[J]. Chinese Journal of Lasers, 47, 0701016(2020).

[3] Amtout A, Raghavan S, Rotella P et al. Theoretical modeling and experimental characterization of InAs/lnGaAs dots in a well detector[C]. //The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003, October 27-28, 2003, Tucson, AZ, USA., 923-924(2003).

[4] Zhang J, Itzler M A, Zbinden H et al. Advances in InGaAs/InP single-photon detector systems for quantum communication[J]. Light: Science & Applications, 4, e286(2015). http://www.nature.com/articles/lsa201559

[5] Chao P F, Xu Y C, Liu C H et al. Optimization and preparation of GaN-based LED chip electrode structure[J]. Laser & Optoelectronics Progress, 57, 072301(2020).

[6] Lin S Y, Tseng C C, Lin W H et al. Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode[J]. Applied Physics Letters, 96, 123503(2010). http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=5516361

[7] Rattunde M, Mermelstein C, Schmitz J et al. Comprehensive modeling of the electro-optical-thermal behavior of (AlGaIn)(AsSb)-based 2.0 μm diode lasers[J]. Applied Physics Letters, 80, 4085-4087(2002). http://scitation.aip.org/content/aip/journal/apl/80/22/10.1063/1.1481979

[8] Lin C, Grau M, Dier O et al. Low threshold room-temperature continuous-wave operation of 2.24--3.04 μm GaInAsSb/AlGaAsSb quantum-well lasers[J]. Applied Physics Letters, 84, 5088-5090(2004). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4873222

[9] Kim J G, Shterengas L, Martinelli R U et al. High-power room-temperature continuous wave operation of 2.7 and 2.8 μm In(Al)GaAsSb/GaSb diode lasers[J]. Applied Physics Letters, 83, 1926-1928(2003).

[10] Wang C A, Shiau D A, Calawa D R. Growth and characterization of InAsSb/GaInAsAb/AlGaAsAb/GaSb heterostructures for wafer-bonded thermophotovoltaic devices[J]. Journal of Crystal Growth, 261, 372-378(2004).

[11] Bründermann E. Widely tunable far-infrared hot-hole semiconductor lasers[M]. //Long-Wavelength Infrared Semiconductor Lasers. Hoboken, NJ, 279-350(2005).

[12] Choi H K, Walpole J N, Turner G W et al. GaInAsSb-AlGaAsSb tapered lasers emitting at 2.05 μm with 0.6-W diffraction-limited power[J]. IEEE Photonics Technology Letters, 10, 938-940(1998).

[13] Garbuzov D Z, Lee H, Khalfin V et al. 2.3--2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers[J]. IEEE Photonics Technology Letters, 11, 794-796(1999).

[14] Li W, Heroux J B, Shao H et al. High-T0 strain-compensated InGaAsSb-AlGaAsSb quantum-well lasers emitting at 2.43 μm[J]. IEEE Photonics Technology Letters, 17, 531-533(2005).

[15] Gao X, Wei Z, Zhao F et al. Investigation of localized states in GaAsSb epilayers grown by molecular beam epitaxy[J]. Scientific Reports, 6, 29112(2016). http://www.ncbi.nlm.nih.gov/pubmed/27381641

[16] Baranowski M, Syperek M, Kudrawiec R et al. Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells[J]. Applied Physics Letters, 98, 061910(2011). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5713027

[17] Baranowski M, Syperek M, Kudrawiec R et al. Carrier dynamics in type-II GaAsSb/GaAs quantum wells[J]. Journal of Physics: Condensed Matter, 24, 185801(2012). http://europepmc.org/abstract/MED/22481185

[18] Xin H P, Kavanagh K L, Kondow M et al. Effects of rapid thermal annealing on GaInNAs/GaAs multiple quantum wells[J]. Journal of Crystal Growth, 201/202, 419-422(1999).

[19] Pan Z, Li L H, Zhang W et al. Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy[J]. Applied Physics Letters, 77, 1280-1282(2000).

[20] Kudrawiec R, Motyka M, Misiewicz J et al. Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11/GaAs single quantum wells[J]. Journal of Applied Physics, 98, 063527(2005).

[21] Kawazu T, Sakaki H. Effects of Sb/As intermixing on optical properties of GaSb type-II quantum dots in GaAs grown by droplet epitaxy[J]. Applied Physics Letters, 97, 261906(2010).

[22] Ulloa J M, Llorens J M, Alén B et al. High efficient luminescence in type-II GaAsSb-capped InAs quantum dots upon annealing[J]. Applied Physics Letters, 101, 253112(2012). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6392764

[23] Das S K, Das T D, Dhar S. Effect of post-growth anneal on the photoluminescence properties of GaSbBi[J]. Semiconductor Science and Technology, 29, 015003(2014).

[24] Bugge R, Fimland B O. Annealing effects in InGaAsSb quantum wells with pentenary AlInGaAsSb barriers[J]. Physica Scripta, T126, 15-20(2006). http://adsabs.harvard.edu/abs/2006PhST..126...15B

[25] Wang Y, Djie H S, Ooi B S. Interdiffusionin InGaAsSb∕AlGaAsSb quantum wells[J]. Journal of Applied Physics, 98, 073508(2005).

[26] Bergman L, Chen X B, Morrison J L et al. Photoluminescence dynamics in ensembles of wide-band-gap nanocrystallites and powders[J]. Journal of Applied Physics, 96, 675-682(2004). http://scitation.aip.org/content/aip/proceeding/aipcp/10.1063/1.1759076

[27] Cooper D E, Bajaj J, Newman P R. Photoluminescence spectroscopy of excitons for evaluation of high-quality CdTe crystals[J]. Journal of Crystal Growth, 86, 544-551(1988).

[28] Schmidt T, Lischka K, Zulehner W. Excitation-power dependence of the near-band-edge photoluminescence of semiconductors[J]. Physical Review B, 45, 8989(1992). http://europepmc.org/abstract/MED/10000759

[29] Gao X, Wei Z P, Fang X et al. Effect of rapid thermal annealing on the optical properties of GaAsSb alloys[J]. Optical Materials Express, 7, 1971-1979(2017). http://www.researchgate.net/publication/317043566_Effect_of_rapid_thermal_annealing_on_the_optical_properties_of_GaAsSb_alloys