Lin Shen, Jilong Tang, Huimin Jia, Dengkui Wang, Dan Fang, Xuan Fang, Fengyuan Lin, Zhipeng Wei. Effect of Rapid Thermal Annealing on Luminescence Properties of InGaAsSb/AlGaAsSb Multiple Quantum Wells Material[J]. Chinese Journal of Lasers, 2021, 48(7): 0711001
- Chinese Journal of Lasers
- Vol. 48, Issue 7, 0711001 (2021)
Fig. 1. Room temperature PL spectra of as-grown sample and samples annealed at 500 ℃, 550 ℃ and 600 ℃ for 30 s
Fig. 2. Peak position and full width at half maximum of room temperature PL spectra of as-grown sample and samples treated at different annealing temperatures
Fig. 3. Schematic of atomic interdiffusion in InGaAsSb/AlGaAsSb quantum well material
Fig. 4. Power-dependent and temperature-dependent PL spectra of as-grown quantum well sample. (a)(b) Power-dependent PL spectra and fitting curve; (c) temperature-dependent PL spectra
Fig. 5. The fitting of PL spectra at low temperature and luminous intensity. (a) Low temperature (10 K) PL spectral and fitting curve of samples treated at different annealing temperatures; (b) luminous intensity of peak 1 and peak 2; (c) luminous intensity ratio of peak 1 to peak 2
Fig. 6. Peak position and full width at half maximum of low temperature PL spectra of samples annealed at different temperatures
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