• Optoelectronics Letters
  • Vol. 12, Issue 4, 249 (2016)
Ming-sheng XU1, Heng ZHANG2, Quan-bin ZHOU1, and Hong WANG1、*
Author Affiliations
  • 1Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou 510641, China
  • 2State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
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    DOI: 10.1007/s11801-016-6075-5 Cite this Article
    XU Ming-sheng, ZHANG Heng, ZHOU Quan-bin, WANG Hong. Effects of p-type GaN thickness on optical properties of GaN-based light-emitting diodes[J]. Optoelectronics Letters, 2016, 12(4): 249 Copy Citation Text show less
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    XU Ming-sheng, ZHANG Heng, ZHOU Quan-bin, WANG Hong. Effects of p-type GaN thickness on optical properties of GaN-based light-emitting diodes[J]. Optoelectronics Letters, 2016, 12(4): 249
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