In this study, composite conductive films doped using poly(3,4-ethylenedioxythiophene) (PEDOT) and various concentrations of graphene oxide (GO) for dye-sensitized solar cells (DSSC) were prepared by the potentiostatic method. The structure and morphology of the composite films were characterized and the square resistance of the different films was measured using a four-probe apparatus. The effect of GO doping concentrations on the properties of the films was investigated, and the optimum preparation process was obtained. The results indicate that the composite film deposited at a GO concentration of 0.3g/L has the best properties, and the film has a high specific surface area, good electrical properties, low charge transfer resistance (5.23Ω·cm ²), because of the doping of GO. The composite film shows good redox catalytic properties. Compared with pure PEDOT, the photoelectric conversion efficiency of the DSSC assembled with the composite film as counter electrode increases from 4.43% to 6.23% with a fill factor of 0.68.