Intracavity Doubling of a Diode Side-Pumped Nd:YAG Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 15 >Issue 7 >Page 845 > Article

Acta Optica Sinica
Vol. 15, Issue 7, 845 (1995)

Intracavity Doubling of a Diode Side-Pumped Nd:YAG Laser

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Intracavity Doubling of a Diode Side-Pumped Nd:YAG Laser[J]. Acta Optica Sinica, 1995, 15(7): 845 Copy Citation Text

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Abstract

A Nd:YAG laser was side pumped with laSer-diode-array of 45 W Q-cw(400 μs) output. This laser provides 3.5 mJ output at 1064 nm for free runing oscillation, and 0.85 mJ at 532 urn for Q-switched operation with pulse. width of 15 ns. Removing the Q-switch away, and shortening the cavity optical length to less than 5 cm, a single longitudinal mode of 532 nm laser was observed near threshold. Increasing the pumpPower somewhat, we have observed the antiphase laser output.

Keywords

antiphase of laser intracavity doubling Q-switching singlelongitudinal mode laser laser-diode side pumping

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Intracavity Doubling of a Diode Side-Pumped Nd:YAG Laser[J]. Acta Optica Sinica, 1995, 15(7): 845

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