CONTROL OF SURFACE DEFECTS IN HgCdTe FILM GROWN BY LIQUID PHASE EPITAXY

WEI Yan-Feng; XU Qing-Qing; CHEN Xiao-Jing; ZHANG Chuan-Jie; SUN Shi-Wen; FANG Wei-Zheng; YANG Jian-Rong

Journals >Journal of Infrared and Millimeter Waves >Volume 28 >Issue 4 >Page 246 > Article

Journal of Infrared and Millimeter Waves
Vol. 28, Issue 4, 246 (2009)

CONTROL OF SURFACE DEFECTS IN HgCdTe FILM GROWN BY LIQUID PHASE EPITAXY

WEI Yan-Feng, XU Qing-Qing, CHEN Xiao-Jing, ZHANG Chuan-Jie, SUN Shi-Wen, FANG Wei-Zheng, and YANG Jian-Rong

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[in Chinese]

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DOI: Cite this Article

WEI Yan-Feng, XU Qing-Qing, CHEN Xiao-Jing, ZHANG Chuan-Jie, SUN Shi-Wen, FANG Wei-Zheng, YANG Jian-Rong. CONTROL OF SURFACE DEFECTS IN HgCdTe FILM GROWN BY LIQUID PHASE EPITAXY[J]. Journal of Infrared and Millimeter Waves, 2009, 28(4): 246 Copy Citation Text

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References

[1] Norton P. HgCdTe infrared detectors［J］. Opto-Electronics Review, 2003, 10 (3):159—174.

[2] Rogalski A. Infrared detectors:an overview［J］. Infrared Physics&Technology, 2002, 43: 187—210.

[6] Parker S G, Weirauch D F, Chandar D. Terracing in HgCdTe LPE films grown from Te solution［J］. Journal of Crystal Growth, 1988, 86 :173—182.

[7] Bauser E. Development of depressions and void during LPE growth of GaAs［J］. J.Appl Physics., 1978, 15: 243—252.

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