Liquid phase epitaxy is a developed technique for the growth of HgCdTe films. Two kinds of macro defects on the surface of HgCdTe film were studied. It was demonstrated that the origin of the void defects was related to the wax contamination on CdZnTe substrate, while the defects of hill-like were due to the CdZnTe particles detached from the edge of the CdZnTe substrate. Through the fine controlling during the substrate preparation, these two kinds of defects can be depressed and the high quality HgCdTe films with zero defect density can be obtained.