• Chinese Journal of Quantum Electronics
  • Vol. 28, Issue 2, 218 (2011)
Jin-yun GAO1、2、*, Qing-li ZHANG1, Liu-sen HU3, Jun WEN3, Shang-da XIA3, Chang-xin GUO3, and Shao-tang YIN1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    GAO Jin-yun, ZHANG Qing-li, HU Liu-sen, WEN Jun, XIA Shang-da, GUO Chang-xin, YIN Shao-tang. Energy levels and crystal-field calculation for Nd3+ in Gd3Ga5O12 single crystal[J]. Chinese Journal of Quantum Electronics, 2011, 28(2): 218 Copy Citation Text show less

    Abstract

    The absorption spectrum of Nd3+ions doped into Gd3 Ga5 O12 (GGG) single crystal was analyzed in the visible and near infrared region. Its crystal-field and spin-orbit parameters were calculated with the DV-Xα method, which belongs to an abinitio calculation. Meanwhile, its free-ions and crystal-field parameters were also been fitted to the experimental energy levels in 300 K and 77 K with the root mean square deviation of 15.79 cm-1 and 11.48 cm-1, respectively. According to the crystal-field calculations, 156 levels of Nd3+ions in 77 K and 88 levels of Nd3+ions in 300 K were assigned. The results indicated that the fitted and calculated crystal-field parameters by DV-Xα are consistent very well. Finally, the fitting results of free-ions and crystal-field parameters are compared with those already reported for Nd3+:YAG.
    GAO Jin-yun, ZHANG Qing-li, HU Liu-sen, WEN Jun, XIA Shang-da, GUO Chang-xin, YIN Shao-tang. Energy levels and crystal-field calculation for Nd3+ in Gd3Ga5O12 single crystal[J]. Chinese Journal of Quantum Electronics, 2011, 28(2): 218
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