[2] GOPAL V,DEVI N,PAL R,et al.Study of the traps at a mercury cadmium telluride-anodic oxide interface using a transient photoconductive decay technique[J].J Cryst Growth,2004,265:530-536.

[3] PAL R,SHARMA B L,GOPAL V,et al.Effect of HgCdTe-passivant interface properties on the responsivity performance of photoconductive detectors[J].Infrared Phys Technol,1999,40:101-107.

[4] DAVIS G D,SUN T S,BUCHNER S P,et al.Anodic oxide composition and Hg depletion at the oxide-semiconductor interface of Hg1-xCdxTe[J].J Vac Sci Technol,1981,19(3):472-476.

[5] ERNE B H,LEFEVRE F,LORANS D,et al.Surface films on HgCdTe and CdTe etched in ferricyanide solution[J].Appl Surf Sci,2001,175-176:579-584.

[6] BUCHNER S P,DAVIS G D,BYER N E.Summary abstract:photochemical oxidation of (Hg,Cd)Te[J].J Vac Sci Technol,1982,21(2):446-447.

[7] ARWIN H,ASPNES D E.Nondestructive analysis of Hg1-xCdxTe (x=0.00,0.20,0.29,and 1.00) by spectroscopic ellipsometry 11substrate,oxide,and interface properties[J].J Vac Sci Technol,1984,A2(3):1316-1323.