Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers

Qinghe Yuan; Hongqi Jing; Qiuyue Zhang; Li Zhong; Suping Liu; Xiaoyu Ma

doi:10.3788/LOP56.040003

Journals >Laser & Optoelectronics Progress >Volume 56 >Issue 4 >Page 040003 > Article

Laser & Optoelectronics Progress
Vol. 56, Issue 4, 040003 (2019)

Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers

Qinghe Yuan^1、2, Hongqi Jing¹, Qiuyue Zhang¹, Li Zhong¹, Suping Liu¹, and Xiaoyu Ma^1、*

Author Affiliations

¹ National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

² College of Materials Science and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/LOP56.040003 Cite this Article Set citation alerts

Qinghe Yuan, Hongqi Jing, Qiuyue Zhang, Li Zhong, Suping Liu, Xiaoyu Ma. Development and Applications of GaAs-Based Near-Infrared High Power Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2019, 56(4): 040003 Copy Citation Text

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