• Laser & Optoelectronics Progress
  • Vol. 54, Issue 11, 111602 (2017)
Xie Hao1、2, Hu Shuhong1、*, Wang Yang1、2, Huang Tiantian1、2, Pan Xiaohang1, Sun Yan1, and Dai Ning1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/lop54.111602 Cite this Article Set citation alerts
    Xie Hao, Hu Shuhong, Wang Yang, Huang Tiantian, Pan Xiaohang, Sun Yan, Dai Ning. Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique[J]. Laser & Optoelectronics Progress, 2017, 54(11): 111602 Copy Citation Text show less
    References

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    [3] Oka T, Mishima T, Kudo M. Low turn-on voltage GaAs heterojunction bipolar transistors with a pseudomorphic GaAsSb base[J]. Applied Physics Letters, 2001, 78(4): 483-485.

    [4] He J, Bao F, Zhang J P. Capping effect of GaAsSb and InGaAsSb on the structural and optical properties of type II GaSb/GaAs quantum dots[J]. Applied Physics Letters, 2012, 100(17): 171914.

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    [6] Gao Y Z, Gong X Y, Fang W Z, et al. Growth and characteristics of InAsSb epilayers with a cutoff wavelength of 4.8 μm prepared by one-step liquid phase epitaxy[J]. Rare Metals, 2009, 28(4): 313-316.

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    [9] Teissier R, Sicault D, Harmand J C, et al. Temperature-dependent valence band offset and band-gap energies of pseudomorphic GaAsSb on GaAs[J]. Journal of Applied Physics, 2001, 89(10): 5473-5477.

    [10] Liao Y F, Xie Q, Xiao Q Q, et al. Photoluminescence of Mg2Si films fabricated by magnetron sputtering[J]. Applied Surface Science, 2017, 403: 302-307.

    Xie Hao, Hu Shuhong, Wang Yang, Huang Tiantian, Pan Xiaohang, Sun Yan, Dai Ning. Properties of GaAs0.9Sb0.1 Epilayer Grown by Two Growth Models of Liquid Phase Epitaxy Technique[J]. Laser & Optoelectronics Progress, 2017, 54(11): 111602
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