• Photonics Research
  • Vol. 5, Issue 4, 335 (2017)
Lei Chen, Han Ye, Yumin Liu*, Dong Wu, Rui Ma, and Zhongyuan Yu
Author Affiliations
  • State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
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    DOI: 10.1364/PRJ.5.000335 Cite this Article Set citation alerts
    Lei Chen, Han Ye, Yumin Liu, Dong Wu, Rui Ma, Zhongyuan Yu. Numerical investigations of an optical switch based on silicon stripe waveguide embedded with vanadium dioxide layers[J]. Photonics Research, 2017, 5(4): 335 Copy Citation Text show less
    (a) 3D and (b) lateral view of the proposed optical switch inserted with an HMM structure consisting of 20-pair alternating VO2/Si layers on a glass substrate.
    Fig. 1. (a) 3D and (b) lateral view of the proposed optical switch inserted with an HMM structure consisting of 20-pair alternating VO2/Si layers on a glass substrate.
    (a) Transmittance diagram of TON based on dielectric VO2 layers with varying k of n˜exp(D). (b) Using the same dielectric VO2 layers with constant n˜exp(D)=3.1309+0.3612i, relationship curve of MD-dm is calculated based on metallic VO2 layers for different k of n˜exp(M).
    Fig. 2. (a) Transmittance diagram of TON based on dielectric VO2 layers with varying k of n˜exp(D). (b) Using the same dielectric VO2 layers with constant n˜exp(D)=3.1309+0.3612i, relationship curve of MD-dm is calculated based on metallic VO2 layers for different k of n˜exp(M).
    Electric field distribution of TE mode propagation for (a) “ON” and (b) “OFF” state with zoom-in views of the HMM structure.
    Fig. 3. Electric field distribution of TE mode propagation for (a) “ON” and (b) “OFF” state with zoom-in views of the HMM structure.
    Power flux density Poavx distribution of TE mode propagation for (a) “ON” and (b) “OFF” state with zoom-in views of the HMM structure.
    Fig. 4. Power flux density Poavx distribution of TE mode propagation for (a) “ON” and (b) “OFF” state with zoom-in views of the HMM structure.
    Transmission diagram of (a) TON (D) and (b) TOFF (M) for an optical switch with dm varying from 5 to 55 nm.
    Fig. 5. Transmission diagram of (a) TON (D) and (b) TOFF (M) for an optical switch with dm varying from 5 to 55 nm.
    Electric field intensity distribution in an optical switch in“OFF” state with different HMM length of (a) LHMM=200 nm (dm=dd=5 nm) and (b) LHMM=600 nm (dm=dd=15 nm).
    Fig. 6. Electric field intensity distribution in an optical switch in“OFF” state with different HMM length of (a) LHMM=200  nm (dm=dd=5 nm) and (b) LHMM=600  nm (dm=dd=15 nm).
    Calculated (a) MD and (b) IL as a function of wavelength with dm (LHMM) varying from 5 nm (200 nm) to 55 nm (2200 nm).
    Fig. 7. Calculated (a) MD and (b) IL as a function of wavelength with dm (LHMM) varying from 5 nm (200 nm) to 55 nm (2200 nm).
    Based on an optical switch using W-doped VO2 layers (dm=5 nm), MD varies as a function of both n and k of n˜exp(M).
    Fig. 8. Based on an optical switch using W-doped VO2 layers (dm=5  nm), MD varies as a function of both n and k of n˜exp(M).
    Lei Chen, Han Ye, Yumin Liu, Dong Wu, Rui Ma, Zhongyuan Yu. Numerical investigations of an optical switch based on silicon stripe waveguide embedded with vanadium dioxide layers[J]. Photonics Research, 2017, 5(4): 335
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