• Journal of Infrared and Millimeter Waves
  • Vol. 33, Issue 2, 117 (2014)
CUI Hao-Yang, XU Yong-Peng, ZENG Jun-Dong, YANG Jun-Jie, and TANG Zhong
Author Affiliations
  • [in Chinese]
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    DOI: 10.3724/sp.j.1010.2014.00117 Cite this Article
    CUI Hao-Yang, XU Yong-Peng, ZENG Jun-Dong, YANG Jun-Jie, TANG Zhong. Determination of minority carrier lifetime in a finite base HgCdTe photodiode:Pulse recovery technique[J]. Journal of Infrared and Millimeter Waves, 2014, 33(2): 117 Copy Citation Text show less
    References

    [1] Hu W D, Chen X S, Ye Z H, et al. Polarity inversion and coupling of laser beam induced current in as-doped long-wavelength HgCdTe infrared detector pixel arrays: experiment and simulation [J]. Appl. Phys. Lett., 2012, 101(18):181108-10.

    [2] Hu W D, Chen X S, Ye Z H, et al. A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density Hydrogen plasma modification [J]. Appl. Phys. Lett., 2011, 99(9):091101-3.

    [3] Hu W D, Chen X S, Yin F, et al. Analysis of temperature dependence of dark current mechanisms for long-wavelength HgCdTe photovoltaic infrared detectors [J]. Journal of Applied Physics, 2009, 105(10): 104502-9.

    [4] Donetsky D, Beienky G, Svensson S, et al. Minority carrier lifetime in type-2 InAs-GaSb strained-layer superlattices and bulk HgCdTe materials [J], Appl. Phys. Lett., 2010, 97(5):052108-10.

    [5] Tang D Y, Mi Z Y. Introduction to optoelectronic devices[M]. Shanghai Science and Technology Literature Press, 1989:340.

    [6] Khanna V K. Physical understanding and technological control of carrier lifetime in semiconductor materials and devices: A critique of conceptual development, state of the art and applications [J]. Progress in Quantum Electronics, 2005, 29: 59-163.

    [7] Lax B, Neustader S F. Transient response of a p-n junction [J], J. Appl. Phys., 1954, 25(9):1148-1154.

    [8] Neudeck P G. Perimeter governed minority carrier lifetime in 4H-SiC p+n diode measured by reverse recovery switching transient analysis [J], J. Electronic Materials, 1998, 27(4):317-323.

    [9] Green M A. Minority carrier lifetime using compensated differential open circuit voltage decay [J], Solide-State Electronics, 1983, 26(11):1117-22.

    [10] Sze S M. Semiconductor devices physics and technology [M]. Suzhou University Press, 2nd press, 2006: 66-68.

    [11] Cui H Y, Li Z F, Liu Z L, et al.. Modulation of the two-photon absorption by electric fields in HgCdTe photodiode [J], Appl Phys Lett, 2008, 92(2):021128-30.

    [12] Yin F, Hu W D, Zhang B, et al. Simulation of laser beam induced current for HgCdTe photodiodes with leakage current [J], Optical and Quantum Electronics, 2009, 41(11-13): 805-810.

    [13] Jozwikowskia K, Jozwikowskab A, Kopytkoa M, et al. Simplified model of dislocations as a SRH recombination channel in the HgCdTe heterostructures [J], Infrared Physics and Technology, 2012, 55(1):98-107.

    [14] Drummond P J, Bhatia D, Ruzyllo J. Measurement of effective carrier lifetime at the semiconductor–dielectric interface by photoconductive decay (PCD) method [J], Solid-State Electronics, 2013, 81:130-134.

    [15] Rose B H. Minority carrier lifetime measurements of Si solar cell using Isc and Voc transient decay [J], IEEE Trans. Electron Dev. 1984, ED-31:559-565.

    [16] Jain S C, Agarwal S K. Importance of emitter recombinations in interpretation of reverse-recovery experiments at high injections [J], J. Appl. Phys. 1983, 54(6):3618-9.

    CUI Hao-Yang, XU Yong-Peng, ZENG Jun-Dong, YANG Jun-Jie, TANG Zhong. Determination of minority carrier lifetime in a finite base HgCdTe photodiode:Pulse recovery technique[J]. Journal of Infrared and Millimeter Waves, 2014, 33(2): 117
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