• Journal of Infrared and Millimeter Waves
  • Vol. 23, Issue 4, 313 (2004)
[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING[J]. Journal of Infrared and Millimeter Waves, 2004, 23(4): 313 Copy Citation Text show less
    References

    [1] Hong J G, Song H W, Lee H C. et al. Structure and electrical properties of Pb(ZrxTi1-x)O3 deposited on textured Pt films[J]. J.Appl.Phys., 2001, 90(4): 1962-1967.

    [2] Huang Z, Zhang Q, Whatmore R W. Low temperature crystallization of lead zirconate titanate thin films by a sol-gel method[J]. J.Appl.Phys., 1999, 85: 7355-7359.

    [3] Mark K, Soyama N, Mori S. et al. Lowing of crystallization temperature of sol-gel derived Pb(Zr,Ti)O3 thin films[J]. Integrated Ferroelectrics, 2000, 30: 193-202.

    [4] Ikarashi N. Analytaical transmission electron microscopy of hydrogen-induced degradation in ferroelectric Pb(Zr,Ti)O3 on a Pt electrodes[J]. Appl.Phys.Lett., 1998, 73(14): 1955-1557.

    [5] Kim T W, Yoon Y S. Microstructural and electrical properties of Pb(Zr0.52Ti0.48)O3 films grown on p-InSb(111) substrate at low temperatue[J]. J.Phys.and Chem.of Solids, 2000, 61: 529-535.

    [6] Tseng Y K, Liu K S, Huang S F, et al. Improment on ferroelectric properties of metal-organic decomposited PZT thin film prepared by using prenucleation layer[J]. Integrated Ferroelectrics, 2000, 30: 157-164.

    [7] Hwang K S, Manabe T, Nagahama T. et al. Effect of substrate material on the crystallinity and epitaxy of Pb(Zr,Ti)O3 thin films[J]. Thin Solid Films, 1999, 347: 106-111.

    [8] Nagaraj N, Aggarwal S, Ramesh R. Influnce of contact electrodes on leakage characteristics in ferroelectric thin films[J]. J.Appl.Phys., 2001, 90(1): 375-382.

    [9] Chen Ming-Sen, Wu Tai-Bor, Wu Jenn-Ming. Effect of textured LaNiO3 electrode on the fatigue improvement of Pb(Zr0.53Ti0.47)O3 thin films[J]. Appl.Phys.Lett., 1996, 68(10): 1430-1432.

    [10] Chao G C, Wu J M. Leakage current and fatigue properties of Pb(Zr, Ti) O3 electrodes[J]. Jpn.J.Appl.Phys., 2001, 40(4A): 2417-2422.

    [11] Meng X J, Cheng J G. Sun J L. et al. Growth of(100)-oriented LaNiO3 thin films directly on Si substrate by a simple metalorganic decomposition technique for the highly oriented PZT thin films[J]. J.Cryst.Growth, 2000, 220: 100-104.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF DEPOSITION POWER ON THE COMPOSITION,STRUCTURE AND PROPERTIES OF PZT THIN FILMS PREPARED BY RF SPUTTERING[J]. Journal of Infrared and Millimeter Waves, 2004, 23(4): 313
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