• Journal of Infrared and Millimeter Waves
  • Vol. 26, Issue 2, 92 (2007)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PARAMETERS EXTRACTION FROM THE DARK CURRENT CHARACTERISTICS OF LONG-WAVELENGTH HgCdTe PHOTODIODE[J]. Journal of Infrared and Millimeter Waves, 2007, 26(2): 92 Copy Citation Text show less
    References

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    [5] John L Moll.In Physics of Semiconductors[M].New York:McGraw-Hill,1964,252.

    [6] Blanks D K,Beck J D,Kinch M A,et al.Golombo,band-to-band tunnel processes in HgGdTe:comparison of experimental and theoretical studies[J].J.Vac.Sci.Technol.,1988,A6:2790-2794.

    [7] Sze S M.Physics of Semiconductor Devices[M].New York:Wiley,1981,800.

    CLP Journals

    [1] [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Study on R-V Chacteristics of HgCdTe Photovoltaic Detectors under Different Baked Temperature[J]. Acta Optica Sinica, 2009, 29(s1): 336

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PARAMETERS EXTRACTION FROM THE DARK CURRENT CHARACTERISTICS OF LONG-WAVELENGTH HgCdTe PHOTODIODE[J]. Journal of Infrared and Millimeter Waves, 2007, 26(2): 92
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