[1] Sa-Halasz G A,Tsu R,Esaki L. A new semiconductor superlattice[J]. Appl. Phys. Lett., 1977,30(12):651-653.
[2] Smith D L, Maihiot C. Proposal for strained type II superlattice infrared detectors [J]. J Appl Phys, 1987, 62(6):2545-2548.
[3] Yongdale E R, Meyer J R. Auger liftetime enhancement in InAs-GaInSb superlattice[J]. Appl. Phys. Lett., 1994, 64(23):3160-3162.
[4] Wei Y, Gin A, Razegh M, et al. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm [J]. Appl Phys Lett, 2002, 81(19):3675-3677.
[5] Rhiger D R, Kvaas R E, Harris S F, et al. Progress with type-II superlattice IR detector arrays[J]. SPIE, 2007, 6542:654202.
[6] Walther M, Rehm R, Fleissner J, et al. InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays[J]//SPIE, 2007, 6542: 654206-654211.
[7] Gunapala S D, Ting D Z, Hill C J, et al. Demonstration of 1k ×1k long-wave and mid-wave superlattice infrared focal plane array[J]//SPIE, 2010, 7808: 78080201-78080206.