In this paper, we reported the growth and fabrication of a 128×128 infrared focal plane array detector made of type-II InAs/GaSb superlattice. The superlattice structure was grown on GaSb substrate using molecular beam epitaxy (MBE) technology. It consisted of 200 periods of 13ML(InAs)/9ML(GaSb) for longwave infrared detection. The pixel of the detector had a conventional PIN structure with a size of 40 μm×40 μm. The device fabrication process consisted of mesa etching, side-wall passivation, metallization and flip-chip hybridization with readout integrated circuit (ROIC). At 77 K, the detector had a 100% cut-off wavelength of 8.0 μm, and a peak detectivity of 6.0×109 cmHz1/2W-1. Concept proof of infrared imaging was also demonstrated with the focal plane array at liquid nitrogen temperature.