• Acta Optica Sinica
  • Vol. 20, Issue 8, 1128 (2000)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Determination of Optical Parameters of GeTe Semiconductor Films Annealed at Different Temperatures[J]. Acta Optica Sinica, 2000, 20(8): 1128 Copy Citation Text show less
    References

    [1] Iwasaki H, Ide Y, Harigaya M et al.. Completely erasable phase change optical disk. Japan. J. Appl. Phys. Part 1, 1992, 31(2B):461~465

    [2] Handa T, Tominaga J, Haratani S et al.. In-Ag-Te-Sb phase change recording media at compact disk linear velocity. Japan. J. Appl. Phys. Part 1, 1993, 32(11B):5226~5229

    [3] Jacobs B A J, Duchateau J P W B. Improved high-density phase-change recording. Japan. J. Appl. Phys. Part 1, 1997, 36(1B):491~494

    [4] Mizuno H, Takada K, Horie M. Extension of linear-velocity margin in phase-change optical recording with variable-pulse compensation. Japan. J. Appl. Phys. Part 1, 1997, 36(1B):514~519

    [5] Kim Jinhong, Kim M R. Effects of microstructure on optical properties of Ge2Sb2Te5 thin films. Japan. J. Appl. Phys. Part 1, 1998, 37(4B):2116~2117

    [6] van Woudenberg R. Short wavelength phase-change recording. Japan. J. Appl. Phys. Part 1, 1998, 37(4B):2159~2162

    [7] Okada M, Ogawa M, Kubogata M et al.. Phase-change optical disk for a high data transfer rate. Japan. J. Appl. Phys. Part 1, 1998, 37(5A):2516~2520

    [8] Yamanaka S, Ogawa S, Morimoto I et al.. Electronic structures and optical properties of GeTe and Ge2Sb2Te5. Japan. J. Appl. Phys. Part 1, 1998, 37(6A):3327~3333

    [9] Nakamura N, Morishita N, Suzuki K et al.. High-density recording capability of five-layered phase-change optical disc. Japan. J. Appl. Phys. Part 1, 1998, 37(6A):3339~3342

    [11] Liu X L, Liang P H. Determination of the parameters of surface layer on glasses by p-polarized reflectance. Appl. Opt., 1997, 36(16):3788~3792

    [12] Liu X L, Liang P H, Zhang W Q et al.. Measuring the optical parameters of thin films by p-polarized laser beams. Opt. & Laser Technol., 1998, 30(2):85~89

    [14] Azzam R M A, Bashara N M. Ellipsometry and Polarized Light. North-Holland Publishing Company, 1977.

    [15] Chen Liangyao, Feng Xingwei, Su Yi et al.. Improved rotating analysis-polarizer type of scanning ellipsometer. Thin Solid Films, 1993, 234(1, 2):385~389

    [16] Chen Liangyao, Feng Xingwei, Su Yi et al.. Design of a scanning ellipsometer by synchronous rotation of the polarizer and analyzer. Appl. Opt., 1994, 33(7):1299~1305

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Determination of Optical Parameters of GeTe Semiconductor Films Annealed at Different Temperatures[J]. Acta Optica Sinica, 2000, 20(8): 1128
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