[4] T. Fujii, Y. Gao, R. Sharma et al.. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening[J]. Appl. Phys. Lett., 2004, 84(6): 855～857
[5] Chia-Feng Lin, Zhong-Jie Yang, Jing-Hui Zheng et al.. Enhanced light output in nitride-based light-emitting diodes by roughening the mesa sidewall[J]. IEEE Photon Technol. Lett., 2005, 17(10): 2038～2040
[6] W. W. Chow, A. F. Wright, A. Girndt et al.. Microscopic theory of gain for an InGaN/AlGaN quantum well laser[J]. Appl. Phys. Lett., 1997, 71(18): 2608～2610
[7] Hung-Wen Huang, J. T. Chu, C. C. Kao et al.. Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface[J]. Nanotechnology, 2005, 16: 1844 ～1848
[8] D. W. Kin, H. Y. Lee, M. C. Yoo et al.. Highly efficient vertical laser-liftoff GaN-based light-emitting diodes formed by optimization of the cathode structure[J]. Appl. Phys. Lett., 2005, 86: 052108-1～052108-3
[9] Eli Yablonovitch. Statistical ray optics[J]. J. Opt. Soc. Am., 1982, 72(7):899～907
[10] Ying-Lan Chang, I-Hsing Tan, Casper Reaves et al.. Passivation of InGaAs/InP surface quantum wells by ion-gun hydrogen[J]. Appl. Phys. Lett., 1994, 64(16): 2658～2660
[11] M. Rahman. Channeling and diffusion in dry-etched damage[J]. J. Appl. Phys., 82(5): 2215～2224
[12] Elaine D. Habere, Monica Hansen, Steve Denbaars. Channeling as a mechanism for dry etch damage in GaN[J]. Appl. Phys. Lett., 2000, 76(26): 3941～3943
[13] P. Boguslawski, E. L. Briggs, J. Bernholc. Native defects in gallium nitride[J]. Phys. Rev. B, 1995, 51: 17255～17259
[15] H. S. Djie, T. Mei, J. Arokiaraj. Photoluminescence enhancement by inductively coupled argon plasma exposure for quantum well intermixing[J]. Appl. Phys. Lett., 2003, 83(1): 60～62
[16] Takashi Mukai, Daisuke Morita, Shuji Nakamura. High-power UV InGaN/AlGaN double-heterostructure LEDs[J]. J. Cryst. Growth., 1998, 189/190: 778～781
