An experimental investigation of the optogalvanio effect of ArII in an HOD lamp by using an Ar+ laser, with its Ising line at 514.5nm, 496.5nm, and 476.5nm separately is reported. By considering various effects, such as ionization, recombination, and other mechanism of excited ions, we propose a simplified model which can be used to explain experimental results satisfactorily. The possibility of measuring some parameters of discharge plasmas in low-possibility of measuring optogalvanio effect is also suggested.