Zhaochen Lü, Qing Wang, Shun Yao, Guangzheng Zhou, Hongyan Yu, Ying Li, Luguang Lang, Tian Lan, Wenjia Zhang, Chenyu Liang, Yang Zhang, Fengchun Zhao, Haifeng Jia, Guanghui Wang, Zhiyong Wang. 4×15 Gbit/s 850 nm Vertical Cavity Surface Emitting Laser Array[J]. Acta Optica Sinica, 2018, 38(5): 0514001
- Acta Optica Sinica
- Vol. 38, Issue 5, 0514001 (2018)
Fig. 1. Schematic of 850 nm VCSEL structure
Fig. 2. (a) PL spectrum of active region at 25 ℃; (b) white light reflection spectrum of VCSEL
Fig. 3. (a) Grid cells on the mask; (b) arrangement of chips in the grid cells; (c) oxidation aperture distribution in each cell on the wafer under the infrared light source CCD; (d) size of oxidation aperture on each cell of the wafer
Fig. 4. Images of 1×4 VCSEL array
Fig. 5. (a) P-I-V curves of 1×4 VCSEL array; (b) spectrum of VCSEL
Fig. 6. Far field spot and divergence angle of single VCSEL
Fig. 7. (a) Box diagram of VCSEL threshold current; (b) box diagram of VCSEL optical output power at driving current of 6 mA; (c) box diagram of VCSEL wavelength at driving current of 6 mA
Fig. 8. High-speed test platform with pulse large signal
Fig. 9. Four-channel optical eye diagrams after signal with modulation rate of 15 Gbit/s transmission in multimode fiber for 1.5 m. (a) P1 channel; (b) P2 channel; (c) P3 channel; (d) P4 channel
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Table 1. Etching depth of different positions of first mesa in VCSEL
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