SURFACE STICKING COEFFICIENT OF As IN MOLECULAR BEAM EPITAXY OF HgCdTe

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[1] Reine M B. Review of HgCdTe photodiodes for IR detection. Proc.of SPIE,2000,4028:320

[2] Rogalski A. Dual-band infrared detectors. Proc. of SPIE, 2000,3948:17

[3] Wu O K, Kamath G S, Radford W A, et al. Chemical doping of HgCdTe by molecular-beam epitaxy. J.Vac.Sci.Technol.,1990,A8:1034

[4] Sheng Jack, Wang Larry, Lux Gayle E. SIMS characterization of HgCdTe and related Ⅱ-Ⅵ compounds. J.Electron.Mater.,1996,25(8):1165

[5] Lee T S, Garland J, Grein C H, et al. Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe. J.Electron.Mater.,2000,29(6):869

[6] Grein C H, Garland J W, Sivananthan S, et al. Arsenic incorporation in MBE grown Hg1-xCdxTe. J.Electron.Mater,1999,28(6):789

[7] He L, Yang J R, Wang S L, et al. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe. J.Cryst.Growth, 1997,175/176:677

[8] He L, Becker C R, Bicknell-Tassius R N, et al. Molecular beam epitaxial growth and evaluation of intrinsic and extrinsically doped beam epitaxial growth and evaluation of intrinsic and extrinsically doped Hg0.8Cd0.2Te on(100) Cd0.96Zn0.04Te. J.Appl.Phys.,1993,73(7):3305

[9] Wijewarnasuriya P S, Yoo S S, Sivananthan S, et al. P-type doping with arsenic in (211)B HgCdTe grown by MBE. J.Electron.Mater.,1996,25(8):1300