[1] T. Tianya, C. Junjie, J. Xue. Research progress of excitonic luminescence in zinc oxide ［J］. Laser & Optoelectronics Progress, 2008, 45(9): 25～30

[2] K. Zheng, C. Xu, H. Zhou et al.. Patterned growth of ZnO nanofibers ［J］. Chin. Opt. Lett., 2009, 7(3): 238～239

[3] C. Jiangbo, W. Li, S. Xueqiong et al.. Affect of ZnO thin film of pulsed laser deposition by substrate temperatures ［J］. Chinese J. Lasers, 2009, 36(6): 1539～1544

[4] W. Yi, J. Wei, X. Guangjian et al.. Photocurrent of ultraviolet photoconductive detectors with ZnO thin film ［J］. Chinese J. Lasers, 2008, 35(12): 284～287

[5] S. H. Park, D. Ahn. Spontaneous and piezoelectric polarization effects in wurtzite ZnO/MgZnO quantum well lasers ［J］. Appl. Phys. Lett., 2005, 87(25): 253503～253509

[6] S. Zaitsev, D. Yakovlev, A. Waag. Renormalization of the band gap in highly photoexcited type-II ZnSe/BeTe structures ［J］. Semiconductors, 2009, 43(2): 212～217

[7] P. Seoung-Hwan. Many-body optical gain of GaInNAs/GaAs strained quantum-well lasers ［J］. Appl. Phys. Lett., 2004, 85(6): 890～892

[8] M. R. Kim, C. Tong. Many-body effects for a quasi-two-dimensional electron-hole plasma including finite well-width ［J］. Phys. Stat. Sol.(b), 2001, 225(1): 185～191

[9] M. R. Kim, C. H. Kim, B. H. Han. Exchange-correlation induced energy-level shift in quantum wells with strain ［J］. J. Appl. Phys., 1998, 83(6): 3197～3202

[10] G. Bongiovanni, J. L. Staehli. Properties of the electron-hole plasma in GaAs-(Ga,Al)As quantum wells: the influence of the finite well width ［J］. Phys. Rev. B, 1989, 39(12): 8359～8363

[11] G. Trnkle, H. Leier, A. Forchel et al.. Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs ［J］. Phys. Rev. Lett., 1987, 58(4): 419～422

[12] S. Das Sarma, R. Jalabert, S. R. E. Yang. Band-gap renormalization in semiconductor quantum wells ［J］. Phys. Rev. B, 1990, 41(12): 8288～8294

[13] P. Vashishta, R. K. Kalia. Universal behavior of exchange-correlation energy in electron-hole liquid ［J］. Phys. Rev. B, 1982, 25(10): 6492～6495

[14] A. Yamamoto, T. Kido, T. Goto et al.. Bandgap renormalization of ZnO epitaxial thin films ［J］. Solid State Commun., 2002, 122(1-2): 29～32

[15] B. P. Zhang, B. L. Liu, J. Z. Yu et al.. Photoluminescence and built-in electric field in ZnO/Mg0.1Zn0.9O quantum wells ［J］. Appl. Phys. Lett., 2007, 90(13): 132113

[16] K. Claus, H. Robert, F. Johannes et al.. Room-temperature stimulated emission of ZnO: alternatives to excitonic lasing ［J］. Phys. Rev. B, 2007, 75(11): 115203～115211

[17] E. Kuokstis, J. W. Yang, G. Simin et al.. Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells ［J］. Appl. Phys. Lett., 2002, 80(6): 977～979

[18] N. Pauc, V. Calvo, J. Eymery et al.. Two-dimensional electron-hole liquid in single Si quantum wells with large electronic and dielectric confinement ［J］. Phys. Rev. Lett., 2004, 92(23): 236802～236805

[19] Y. J. Wang, S. J. Xu, Q. Li et al.. Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers ［J］. Appl. Phys. Lett., 2006, 88(4): 041903