• Chinese Journal of Quantum Electronics
  • Vol. 27, Issue 3, 351 (2010)
Ru-hua TAO1、2、*, Yu-liang ZHANG1、2, Wei-wei DONG1、2, Zan-Hong DENG1、2, Bo WANG3, and Xiao-dong FANG1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: Cite this Article
    TAO Ru-hua, ZHANG Yu-liang, DONG Wei-wei, DENG Zan-Hong, WANG Bo, FANG Xiao-dong. Laser-induced thermoelectric voltage effect of Sr2 FeMoO6 film[J]. Chinese Journal of Quantum Electronics, 2010, 27(3): 351 Copy Citation Text show less

    Abstract

    Sr2 FeMoO6 film was grown on vicinal-cut SrTiO3 (100) substrate by pulsed laser deposition method. The laser-induced thermoelectric voltage (LITV) was observed when the film was irradiated by visible and infrared pulsed laser. It was found that the maximal peak voltages were 0.9 V and 0.8 V when the film was irradiated by the laser of 1064 nm and 532 nm wavelength, respectively. The intensity of the LITV signals changed linearly with the pulse energy, which can be used as laser power/energy meters with high sensitivity. It was also found the signal polarity was reversed when the sample was irradiated through the substrate rather than at the air/film interface. Anisotropy Seebeck effect is proposed to cause the lateral voltages.
    TAO Ru-hua, ZHANG Yu-liang, DONG Wei-wei, DENG Zan-Hong, WANG Bo, FANG Xiao-dong. Laser-induced thermoelectric voltage effect of Sr2 FeMoO6 film[J]. Chinese Journal of Quantum Electronics, 2010, 27(3): 351
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