• Journal of Infrared and Millimeter Waves
  • Vol. 42, Issue 5, 659 (2023)
Bing-Hui WANG1、2, Yan-Hui XING1、*, Wen-Xin HE1、2, Bao-Lu GUAN1, Jun HAN1, Sheng-Yuan DONG1、2, Jia-Hao LI1、2, Pei-Jing FANG2, Zi-Shuo HAN1, Bao-Shun ZHANG2, and Zhong-Ming ZENG2、**
Author Affiliations
  • 1Key Laboratory of Opto-electronics Technology,Ministry of Education,College of Microelectronics,Beijing University of Technology,Beijing 100124,China
  • 2Nanofabrication facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China
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    DOI: 10.11972/j.issn.1001-9014.2023.05.011 Cite this Article
    Bing-Hui WANG, Yan-Hui XING, Wen-Xin HE, Bao-Lu GUAN, Jun HAN, Sheng-Yuan DONG, Jia-Hao LI, Pei-Jing FANG, Zi-Shuo HAN, Bao-Shun ZHANG, Zhong-Ming ZENG. High Performance and Broadband photodetectors Based on SnS2/InSe Heterojunction[J]. Journal of Infrared and Millimeter Waves, 2023, 42(5): 659 Copy Citation Text show less
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    Bing-Hui WANG, Yan-Hui XING, Wen-Xin HE, Bao-Lu GUAN, Jun HAN, Sheng-Yuan DONG, Jia-Hao LI, Pei-Jing FANG, Zi-Shuo HAN, Bao-Shun ZHANG, Zhong-Ming ZENG. High Performance and Broadband photodetectors Based on SnS2/InSe Heterojunction[J]. Journal of Infrared and Millimeter Waves, 2023, 42(5): 659
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